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- Q62475973 description "im März 2008 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62475973 description "wetenschappelijk artikel" @default.
- Q62475973 description "наукова стаття, опублікована в березні 2008" @default.
- Q62475973 name "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 name "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 type Item @default.
- Q62475973 label "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 label "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 prefLabel "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 prefLabel "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 P1433 Q62475973-01C6F250-5BB6-48B1-9F03-D12CE0B2A087 @default.
- Q62475973 P1476 Q62475973-0A7274AC-EC80-4AD8-BE6F-35D8D32710ED @default.
- Q62475973 P2093 Q62475973-1F9F1432-C42B-474D-A80C-BF84C588D224 @default.
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- Q62475973 P304 Q62475973-DF6BA045-1D02-4D15-A23A-567651587AA4 @default.
- Q62475973 P31 Q62475973-F62F5D5C-138F-4936-8B5E-6FEFCF86F904 @default.
- Q62475973 P356 Q62475973-B6634596-0CCC-47AC-98FF-5B45AD3C167D @default.
- Q62475973 P433 Q62475973-0348AA32-766E-4CD5-B8C1-964B23BEA3CF @default.
- Q62475973 P478 Q62475973-1B1B2F6C-8F3D-4121-9F6E-91C739E66442 @default.
- Q62475973 P577 Q62475973-351DCA72-3D84-4412-8EFF-64B41ADDA96B @default.
- Q62475973 P356 TED.2007.915089 @default.
- Q62475973 P1433 Q2269764 @default.
- Q62475973 P1476 "Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$" @default.
- Q62475973 P2093 "Dionyz Pogany" @default.
- Q62475973 P2093 "Emmerich Bertagnolli" @default.
- Q62475973 P2093 "Eric Feltin" @default.
- Q62475973 P2093 "Gianmauro Pozzovivo" @default.
- Q62475973 P2093 "Gottfried Strasser" @default.
- Q62475973 P2093 "Jan Kuzmik" @default.
- Q62475973 P2093 "Jean-FranÇois Carlin" @default.
- Q62475973 P2093 "Marcus Gonschorek" @default.
- Q62475973 P2093 "Nicolas Grandjean" @default.
- Q62475973 P2093 "Stephan Abermann" @default.
- Q62475973 P304 "937-941" @default.
- Q62475973 P31 Q13442814 @default.
- Q62475973 P356 "10.1109/TED.2007.915089" @default.
- Q62475973 P433 "3" @default.
- Q62475973 P478 "55" @default.
- Q62475973 P577 "2008-03-01T00:00:00Z" @default.