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- Q62511781 description "article" @default.
- Q62511781 description "im Jahr 2013 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62511781 description "wetenschappelijk artikel" @default.
- Q62511781 description "наукова стаття, опублікована у 2013" @default.
- Q62511781 name "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
- Q62511781 name "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
- Q62511781 type Item @default.
- Q62511781 label "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
- Q62511781 label "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
- Q62511781 prefLabel "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
- Q62511781 prefLabel "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
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- Q62511781 P356 C2TC00280A @default.
- Q62511781 P1433 Q18720052 @default.
- Q62511781 P1476 "Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors" @default.
- Q62511781 P2093 "Chan Eon Park" @default.
- Q62511781 P2093 "Jiye Kim" @default.
- Q62511781 P2093 "Se Hyun Kim" @default.
- Q62511781 P2093 "Seonuk Park" @default.
- Q62511781 P2093 "Tae Kyu An" @default.
- Q62511781 P304 "1272-1278" @default.
- Q62511781 P31 Q13442814 @default.
- Q62511781 P356 "10.1039/C2TC00280A" @default.
- Q62511781 P407 Q1860 @default.
- Q62511781 P433 "6" @default.
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- Q62511781 P577 "2013-01-01T00:00:00Z" @default.
- Q62511781 P921 Q176097 @default.