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- Q62514595 description "article published in 1985" @default.
- Q62514595 description "article scientifique publié en 1985" @default.
- Q62514595 description "im September 1985 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62514595 description "wetenschappelijk artikel" @default.
- Q62514595 description "наукова стаття, опублікована у вересні 1985" @default.
- Q62514595 description "հոդված հրատարակված 1985 թվականին" @default.
- Q62514595 name "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 name "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 type Item @default.
- Q62514595 label "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 label "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 prefLabel "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 prefLabel "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 P1433 Q62514595-AFDD166A-FF04-49C1-8DD0-E4A470B17886 @default.
- Q62514595 P1476 Q62514595-5F0284CE-7149-4DA5-914D-802B73267BC3 @default.
- Q62514595 P2093 Q62514595-4AED08EA-17B5-44F6-BB2F-51DA64E575E8 @default.
- Q62514595 P2093 Q62514595-4B31CCE5-9AF4-4CE0-86EC-F49A55BF351A @default.
- Q62514595 P2093 Q62514595-5544723E-E1FF-4F31-A6E1-F99467A244EA @default.
- Q62514595 P2093 Q62514595-ED5E0A2D-F0FD-4653-9E7C-237F78ECFBBD @default.
- Q62514595 P304 Q62514595-4A975F78-5BD3-44A3-9DEC-2278A868745B @default.
- Q62514595 P31 Q62514595-FA08DD08-6DB5-4230-A1C4-217B761BF265 @default.
- Q62514595 P356 Q62514595-801613E4-E6C1-498F-B005-97FFC5616316 @default.
- Q62514595 P433 Q62514595-3F16F755-FB3D-4A24-8885-C2F827F050E5 @default.
- Q62514595 P478 Q62514595-B1C4A734-BFF0-4B8F-A70F-3F7C5F675EEE @default.
- Q62514595 P577 Q62514595-35DFF1AC-5E7C-4D67-BC0F-BEC5E1F4B1B8 @default.
- Q62514595 P356 005 @default.
- Q62514595 P1433 Q28807304 @default.
- Q62514595 P1476 "0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time" @default.
- Q62514595 P2093 "A Hangleiter" @default.
- Q62514595 P2093 "J Wagner" @default.
- Q62514595 P2093 "K Thonke" @default.
- Q62514595 P2093 "R Sauer" @default.
- Q62514595 P304 "L795-L801" @default.
- Q62514595 P31 Q13442814 @default.
- Q62514595 P356 "10.1088/0022-3719/18/26/005" @default.
- Q62514595 P433 "26" @default.
- Q62514595 P478 "18" @default.
- Q62514595 P577 "1985-09-20T00:00:00Z" @default.