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- Q62519620 description "article scientifique publié en 2006" @default.
- Q62519620 description "im Juli 2006 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62519620 description "scholarly article in Physical Review B, vol. 74 no. 3, July 2006" @default.
- Q62519620 description "wetenschappelijk artikel" @default.
- Q62519620 description "наукова стаття, опублікована в липні 2006" @default.
- Q62519620 name "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 name "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 type Item @default.
- Q62519620 label "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 label "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 prefLabel "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 prefLabel "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 P1433 Q62519620-031E6E29-E315-40A6-919A-03957D0BDF8B @default.
- Q62519620 P1476 Q62519620-5265F56F-F713-4CEE-88A9-6A606E6BA615 @default.
- Q62519620 P2093 Q62519620-082D1E35-1E08-4D7A-872D-4886ABE17678 @default.
- Q62519620 P2093 Q62519620-ED88085F-A771-4294-9D8C-C1345BA3B003 @default.
- Q62519620 P31 Q62519620-C92A9185-1325-47C2-A8EF-9AFC3E3F5482 @default.
- Q62519620 P356 Q62519620-934885AA-DA49-4153-9565-040499749C7A @default.
- Q62519620 P407 Q62519620-9D8AFE9D-7CF8-47A5-BE21-6013A22945DE @default.
- Q62519620 P433 Q62519620-35A33820-7C20-4740-A24E-4DB3506E06AE @default.
- Q62519620 P478 Q62519620-CD576D88-1A8B-470A-81D6-93F04B443766 @default.
- Q62519620 P577 Q62519620-EA05D7E7-1DB7-4E1F-AF82-4CD977060A6F @default.
- Q62519620 P356 PHYSREVB.74.035213 @default.
- Q62519620 P1433 Q2284414 @default.
- Q62519620 P1476 "Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique" @default.
- Q62519620 P2093 "Osamu Wada" @default.
- Q62519620 P2093 "Takashi Kita" @default.
- Q62519620 P31 Q13442814 @default.
- Q62519620 P356 "10.1103/PHYSREVB.74.035213" @default.
- Q62519620 P407 Q1860 @default.
- Q62519620 P433 "3" @default.
- Q62519620 P478 "74" @default.
- Q62519620 P577 "2006-07-31T00:00:00Z" @default.