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- Q62525617 description "wetenschappelijk artikel" @default.
- Q62525617 description "наукова стаття, опублікована в листопаді 2018" @default.
- Q62525617 name "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 name "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 type Item @default.
- Q62525617 label "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 label "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 prefLabel "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 prefLabel "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 P1433 Q62525617-87601AA1-8AFA-46D0-A693-7A0102A73018 @default.
- Q62525617 P1476 Q62525617-7DF2E828-ABB2-4B64-8233-755C5C5C1E5B @default.
- Q62525617 P2093 Q62525617-04454265-B39A-4562-AE5C-0B65EEC5177A @default.
- Q62525617 P2093 Q62525617-3151D7F1-94A8-487B-8A15-ED27C1E029A0 @default.
- Q62525617 P2093 Q62525617-8D3B61FF-D7F4-4DCA-824B-A3B97AE037A7 @default.
- Q62525617 P2093 Q62525617-ADF20109-1EC2-45CE-9CB7-C52130C28437 @default.
- Q62525617 P2093 Q62525617-D70783E6-970A-4A4C-ACA8-749BD1856578 @default.
- Q62525617 P2093 Q62525617-FAED8E33-E07C-44C7-9ED2-7AF8F692F780 @default.
- Q62525617 P2093 Q62525617-FE78EB09-4A8A-4940-8AB3-CCC1C989A01A @default.
- Q62525617 P304 Q62525617-330E94B5-A44D-4950-805D-0B2BE8C5E218 @default.
- Q62525617 P31 Q62525617-FE24E3F2-512F-4ADA-A4BA-60A717CB91D6 @default.
- Q62525617 P356 Q62525617-1F82B86C-FD10-4E34-B05E-0B08E2B47E95 @default.
- Q62525617 P478 Q62525617-1906A4D3-0DC2-48FC-BD41-13E6DAEB1C86 @default.
- Q62525617 P50 Q62525617-D7B192BF-3AEA-4D92-AE0B-F8869A3D8EEE @default.
- Q62525617 P577 Q62525617-C9F72AFE-FA81-4349-865E-06A0A7D86EE1 @default.
- Q62525617 P356 J.JALLCOM.2018.08.059 @default.
- Q62525617 P1433 Q4306918 @default.
- Q62525617 P1476 "Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering" @default.
- Q62525617 P2093 "A. Núñez-Cascajero" @default.
- Q62525617 P2093 "E. Monroy" @default.
- Q62525617 P2093 "F.B. Naranjo" @default.
- Q62525617 P2093 "M. González-Herráez" @default.
- Q62525617 P2093 "R. Blasco" @default.
- Q62525617 P2093 "S. Valdueza-Felip" @default.
- Q62525617 P2093 "S.I. Molina" @default.
- Q62525617 P304 "824-830" @default.
- Q62525617 P31 Q13442814 @default.
- Q62525617 P356 "10.1016/J.JALLCOM.2018.08.059" @default.
- Q62525617 P478 "769" @default.
- Q62525617 P50 Q58423371 @default.
- Q62525617 P577 "2018-11-01T00:00:00Z" @default.