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- Q62552542 description "im August 2013 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62552542 description "wetenschappelijk artikel" @default.
- Q62552542 description "наукова стаття, опублікована в серпні 2013" @default.
- Q62552542 name "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates" @default.
- Q62552542 name "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided" @default.
- Q62552542 type Item @default.
- Q62552542 label "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates" @default.
- Q62552542 label "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided" @default.
- Q62552542 prefLabel "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates" @default.
- Q62552542 prefLabel "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided" @default.
- Q62552542 P1433 Q62552542-F390AD6A-E026-4669-B9CC-748E38DD3E35 @default.
- Q62552542 P1476 Q62552542-0D176C57-DB86-42F9-81C9-F010B809934B @default.
- Q62552542 P2093 Q62552542-60366E8D-440C-4712-9347-5E483A3E33E3 @default.
- Q62552542 P2093 Q62552542-6EB91804-5D12-4C61-A021-707E50A175D5 @default.
- Q62552542 P2093 Q62552542-748D128F-37F8-4A9A-8098-2E51BB8F9029 @default.
- Q62552542 P2093 Q62552542-7AC4A905-C772-4630-BCF8-180CFC590988 @default.
- Q62552542 P2093 Q62552542-C74F0043-7326-4458-AC86-9B20823A22F0 @default.
- Q62552542 P2093 Q62552542-D9804AEE-AC93-4F21-A068-D4F91B9C0450 @default.
- Q62552542 P2093 Q62552542-E5603B2B-B0B0-4C0A-A77E-0B422DB19708 @default.
- Q62552542 P304 Q62552542-715AA227-C6F5-41C4-A282-691ED72A2738 @default.
- Q62552542 P31 Q62552542-BBE33071-92DB-434D-9220-EE0A8F4DC8C9 @default.
- Q62552542 P356 Q62552542-71A97F14-1FB4-4748-A0C1-4E5652FD70C3 @default.
- Q62552542 P433 Q62552542-6C695128-B364-4C42-8DB4-68D1774CF6FF @default.
- Q62552542 P478 Q62552542-CC35F596-A372-478A-84BC-EC2590500F95 @default.
- Q62552542 P577 Q62552542-4FCDB1E3-F4FC-4FDC-A38B-5FFCD2249E9C @default.
- Q62552542 P356 JJAP.52.08JD05 @default.
- Q62552542 P1433 Q2366671 @default.
- Q62552542 P1476 "Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates" @default.
- Q62552542 P2093 "Akinori Koukitu" @default.
- Q62552542 P2093 "Hisashi Murakami" @default.
- Q62552542 P2093 "K. Fredrik Karlsson" @default.
- Q62552542 P2093 "Per-Olof Holtz" @default.
- Q62552542 P2093 "Rie Togashi" @default.
- Q62552542 P2093 "Sho Yamamoto" @default.
- Q62552542 P2093 "Yoshinao Kumagai" @default.
- Q62552542 P304 "08JD05" @default.
- Q62552542 P31 Q13442814 @default.
- Q62552542 P356 "10.7567/JJAP.52.08JD05" @default.
- Q62552542 P433 "8S" @default.
- Q62552542 P478 "52" @default.
- Q62552542 P577 "2013-08-01T00:00:00Z" @default.