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- Q62564575 description "article scientifique publié en 2009" @default.
- Q62564575 description "article" @default.
- Q62564575 description "im Januar 2009 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62564575 description "wetenschappelijk artikel" @default.
- Q62564575 description "наукова стаття, опублікована в січні 2009" @default.
- Q62564575 description "հոդված" @default.
- Q62564575 name "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si" @default.
- Q62564575 name "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)" @default.
- Q62564575 type Item @default.
- Q62564575 label "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si" @default.
- Q62564575 label "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)" @default.
- Q62564575 prefLabel "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si" @default.
- Q62564575 prefLabel "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)" @default.
- Q62564575 P1433 Q62564575-4706E95A-560B-4A60-B4C5-553E8B2DE75E @default.
- Q62564575 P1476 Q62564575-5BC94A4F-38C4-4125-BEF7-9E2F3E3F737B @default.
- Q62564575 P2093 Q62564575-7960823D-7C73-47FB-ABCC-E730B3283F5B @default.
- Q62564575 P2093 Q62564575-A0989E10-8401-43AB-A0F8-1CDE5C566627 @default.
- Q62564575 P2093 Q62564575-A66BF66A-9B92-4B63-87FC-4736523A8E91 @default.
- Q62564575 P2093 Q62564575-E4E5A817-A916-4139-9F84-2FE0A6EBCBB3 @default.
- Q62564575 P2093 Q62564575-F6750F3F-7107-4D48-8707-EA78B4367DA7 @default.
- Q62564575 P2093 Q62564575-F8448DA2-AC2B-4990-9B21-61383BA350CC @default.
- Q62564575 P2093 Q62564575-FDE24D49-0F83-40BB-BCE7-8E53893C06DA @default.
- Q62564575 P304 Q62564575-56670992-0EAE-4ED8-84ED-98BCBF5559CD @default.
- Q62564575 P31 Q62564575-8D1FAB0C-828C-4F30-B775-F39FB5646A4E @default.
- Q62564575 P356 Q62564575-A8663870-9AFD-403B-8864-2F22A3CC976D @default.
- Q62564575 P433 Q62564575-7F7E1904-BCDE-4006-8B01-DF2B8AB048BE @default.
- Q62564575 P478 Q62564575-F929973E-6D83-4681-A915-8031A398C805 @default.
- Q62564575 P577 Q62564575-91CD5A74-2A96-40DA-B9DA-231CA1D86F9C @default.
- Q62564575 P921 Q62564575-1E784B44-F295-4320-AA35-75DB240F2151 @default.
- Q62564575 P356 PSSC.200880878 @default.
- Q62564575 P1433 Q15749953 @default.
- Q62564575 P1476 "AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)" @default.
- Q62564575 P2093 "B. Damilano" @default.
- Q62564575 P2093 "E. Frayssinet" @default.
- Q62564575 P2093 "F. Semond" @default.
- Q62564575 P2093 "J.-C. Moreno" @default.
- Q62564575 P2093 "N. Baron" @default.
- Q62564575 P2093 "S. Chenot" @default.
- Q62564575 P2093 "Y. Cordier" @default.
- Q62564575 P304 "S1020-S1023" @default.
- Q62564575 P31 Q13442814 @default.
- Q62564575 P356 "10.1002/PSSC.200880878" @default.
- Q62564575 P433 "S2" @default.
- Q62564575 P478 "6" @default.
- Q62564575 P577 "2009-01-20T00:00:00Z" @default.
- Q62564575 P921 Q214781 @default.