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- Q62592416 description "im April 2008 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62592416 description "wetenschappelijk artikel" @default.
- Q62592416 description "наукова стаття, опублікована у квітні 2008" @default.
- Q62592416 name "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 name "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 type Item @default.
- Q62592416 label "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 label "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 prefLabel "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 prefLabel "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 P1433 Q62592416-DA5DA286-9B9A-4446-927A-549E13EEFBA1 @default.
- Q62592416 P1476 Q62592416-D23D2846-4AB8-47D1-992F-FA5134748F43 @default.
- Q62592416 P2093 Q62592416-3C63699D-6CC4-4DD6-BBE5-F3C7FF495CEE @default.
- Q62592416 P2093 Q62592416-B76B0B0F-48D1-4A2F-8D16-547A57B93AFE @default.
- Q62592416 P2093 Q62592416-D5304E72-6F10-46C5-9C07-EC6C41F3F6B1 @default.
- Q62592416 P304 Q62592416-A649DE91-D2C2-48CB-9F2E-AA957ACD4807 @default.
- Q62592416 P31 Q62592416-DD57F818-82ED-40BB-9D10-BF5A3EB0FC06 @default.
- Q62592416 P356 Q62592416-2411D76B-3982-45C4-BFD9-13EE536CEB5D @default.
- Q62592416 P407 Q62592416-7BD5A9AF-F0A7-402D-8E4B-D8B0D95D3747 @default.
- Q62592416 P433 Q62592416-C5E583EF-D0C8-4E50-9709-3E76A572EF02 @default.
- Q62592416 P478 Q62592416-3A3087FC-E4CB-4E0A-BA02-612CD66C321F @default.
- Q62592416 P577 Q62592416-EA33E257-6D1E-412A-B4D1-6FA49B9581BB @default.
- Q62592416 P921 Q62592416-B277505F-C38F-457B-8ED4-C431945C580D @default.
- Q62592416 P356 1.2912034 @default.
- Q62592416 P1433 Q621615 @default.
- Q62592416 P1476 "Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer" @default.
- Q62592416 P2093 "Arnaud Valeille" @default.
- Q62592416 P2093 "Koji Muraki" @default.
- Q62592416 P2093 "Yoshiro Hirayama" @default.
- Q62592416 P304 "152106" @default.
- Q62592416 P31 Q13442814 @default.
- Q62592416 P356 "10.1063/1.2912034" @default.
- Q62592416 P407 Q1860 @default.
- Q62592416 P433 "15" @default.
- Q62592416 P478 "92" @default.
- Q62592416 P577 "2008-04-14T00:00:00Z" @default.
- Q62592416 P921 Q1425625 @default.