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- Q62593150 description "article scientifique publié en 2008" @default.
- Q62593150 description "article" @default.
- Q62593150 description "wetenschappelijk artikel" @default.
- Q62593150 description "наукова стаття, опублікована у квітні 2008" @default.
- Q62593150 name "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
- Q62593150 name "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
- Q62593150 type Item @default.
- Q62593150 label "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
- Q62593150 label "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
- Q62593150 prefLabel "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
- Q62593150 prefLabel "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
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- Q62593150 P577 Q62593150-593F39E0-778C-475D-BF99-09642D8AE984 @default.
- Q62593150 P356 RELPHY.2008.4558981 @default.
- Q62593150 P1476 "Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping" @default.
- Q62593150 P2093 "Barry O'Sullivan" @default.
- Q62593150 P2093 "Guido Groeseneken" @default.
- Q62593150 P2093 "HongYu Yu" @default.
- Q62593150 P2093 "Lars-Ake Ragnarsson" @default.
- Q62593150 P2093 "Luigi Pantisano" @default.
- Q62593150 P2093 "Marc Aoulaiche" @default.
- Q62593150 P2093 "Peer Lehnen" @default.
- Q62593150 P2093 "Sven Van Elshocht" @default.
- Q62593150 P2093 "Vincent S. Chang" @default.
- Q62593150 P31 Q13442814 @default.
- Q62593150 P356 "10.1109/RELPHY.2008.4558981" @default.
- Q62593150 P50 Q56424345 @default.
- Q62593150 P50 Q63801718 @default.
- Q62593150 P577 "2008-04-01T00:00:00Z" @default.