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- Q62605209 description "wetenschappelijk artikel" @default.
- Q62605209 description "наукова стаття, опублікована в серпні 2012" @default.
- Q62605209 name "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
- Q62605209 name "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
- Q62605209 type Item @default.
- Q62605209 label "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
- Q62605209 label "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
- Q62605209 prefLabel "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
- Q62605209 prefLabel "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
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- Q62605209 P31 Q62605209-7FDDF36B-5262-46D0-9FBF-1ACB14837B63 @default.
- Q62605209 P356 Q62605209-F71E6560-44D7-43B0-B5E6-BF59BBE3A509 @default.
- Q62605209 P577 Q62605209-FF1939C3-DD4B-4CAE-95C5-895480A24A08 @default.
- Q62605209 P356 ICIPRM.2012.6403345 @default.
- Q62605209 P1476 "High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides" @default.
- Q62605209 P2093 "A. C. Gossard" @default.
- Q62605209 P2093 "A. D. Carter" @default.
- Q62605209 P2093 "B. J. Thibeault" @default.
- Q62605209 P2093 "D. C. Elias" @default.
- Q62605209 P2093 "Hong Lu" @default.
- Q62605209 P2093 "J. J. M. Law" @default.
- Q62605209 P2093 "M. J. W. Rodwell" @default.
- Q62605209 P2093 "S. Stemmer" @default.
- Q62605209 P2093 "Sanghoon Lee" @default.
- Q62605209 P2093 "V. Chobpattana" @default.
- Q62605209 P2093 "W. Mitchell" @default.
- Q62605209 P31 Q13442814 @default.
- Q62605209 P356 "10.1109/ICIPRM.2012.6403345" @default.
- Q62605209 P577 "2012-08-01T00:00:00Z" @default.