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- Q62675593 description "article" @default.
- Q62675593 description "im Februar 1995 veröffentlichter wissenschaftlicher Artikel" @default.
- Q62675593 description "wetenschappelijk artikel" @default.
- Q62675593 description "наукова стаття, опублікована в лютому 1995" @default.
- Q62675593 name "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 name "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 type Item @default.
- Q62675593 label "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 label "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 prefLabel "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 prefLabel "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 P1433 Q62675593-917BE01E-8703-45B2-9BB1-642DE48772BC @default.
- Q62675593 P1476 Q62675593-05CA3FB2-3D01-42BB-8A83-B8AF29B97D92 @default.
- Q62675593 P2093 Q62675593-1B9A2267-4501-4670-A783-B2CB73825067 @default.
- Q62675593 P2093 Q62675593-243D15DE-8FC8-4B0A-B2E0-41CBD89AB307 @default.
- Q62675593 P2093 Q62675593-458533AC-5FB0-4977-945C-6239ACB22C78 @default.
- Q62675593 P2093 Q62675593-C58B65F9-2642-499B-A318-0D673CFC8C68 @default.
- Q62675593 P304 Q62675593-15569F75-90A2-4B98-8061-9DA3D96FA76C @default.
- Q62675593 P31 Q62675593-8EB4FA5C-348D-4C93-B5D9-4EB8F912C4BD @default.
- Q62675593 P356 Q62675593-7DF1883F-B3E9-4801-89EA-DD2095D81200 @default.
- Q62675593 P433 Q62675593-D2D4585A-2D32-4FCB-ABA8-B0F9681B0663 @default.
- Q62675593 P478 Q62675593-73099BD9-E5F0-4E23-A726-4B06FCDB7F6E @default.
- Q62675593 P50 Q62675593-34E0962E-44BF-4945-92AF-44465C0B260E @default.
- Q62675593 P50 Q62675593-611B7D7E-05B0-480D-9005-2B988F609C54 @default.
- Q62675593 P577 Q62675593-989543E2-6C61-4B41-82AB-8DDB30D2C146 @default.
- Q62675593 P356 JJAP.34.959 @default.
- Q62675593 P1433 Q2366671 @default.
- Q62675593 P1476 "Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases" @default.
- Q62675593 P2093 "Hikaru Kobayashi" @default.
- Q62675593 P2093 "Toshio Mori" @default.
- Q62675593 P2093 "Yasushiro Nishioka" @default.
- Q62675593 P2093 "Yoshihiro Nakato" @default.
- Q62675593 P304 "959-964" @default.
- Q62675593 P31 Q13442814 @default.
- Q62675593 P356 "10.1143/JJAP.34.959" @default.
- Q62675593 P433 "Part 1, No. 2B" @default.
- Q62675593 P478 "34" @default.
- Q62675593 P50 Q60100247 @default.
- Q62675593 P50 Q64871706 @default.
- Q62675593 P577 "1995-02-28T00:00:00Z" @default.