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- Q63790558 description "article scientifique publié en 1997" @default.
- Q63790558 description "wetenschappelijk artikel" @default.
- Q63790558 description "наукова стаття, опублікована в січні 1997" @default.
- Q63790558 name "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 name "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 type Item @default.
- Q63790558 label "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 label "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 prefLabel "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 prefLabel "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 P1433 Q63790558-D63EC016-AD15-4EC9-B490-95D7FF3C2C47 @default.
- Q63790558 P1476 Q63790558-1A43F4B6-26A4-4AD9-BD10-2ABBA1CFE3BF @default.
- Q63790558 P2093 Q63790558-744E17CB-6E62-4AA8-9A91-3FE534C7EA23 @default.
- Q63790558 P2093 Q63790558-74F6F18D-ADD7-4022-A570-E9A0D3B4FBF1 @default.
- Q63790558 P2093 Q63790558-79500550-FFCF-4069-97AB-BEC1CFB61600 @default.
- Q63790558 P2093 Q63790558-9B1EFE20-DADD-448C-999A-50D7B9757725 @default.
- Q63790558 P2093 Q63790558-F9EED2CE-39E9-4066-9AE4-E5EF39E782EA @default.
- Q63790558 P2860 Q63790558-0E9B16C3-8437-405A-8D89-2B8595BAB182 @default.
- Q63790558 P304 Q63790558-5BCED15F-8AAC-40D6-9850-AFA624BFBD9B @default.
- Q63790558 P31 Q63790558-094C2D56-4618-44FA-B997-60BB74C8A39D @default.
- Q63790558 P356 Q63790558-AB05CCA9-FE9F-49F8-80ED-4D05599C0823 @default.
- Q63790558 P433 Q63790558-7EED11BC-3BAE-479A-8DEF-5F746D9A966B @default.
- Q63790558 P478 Q63790558-4FFF015C-A183-4C3D-B6A1-844AF8CDB5E2 @default.
- Q63790558 P50 Q63790558-552B5CB5-3C49-48EE-AC09-C4FA365C9B5B @default.
- Q63790558 P577 Q63790558-12A24D2F-A27F-4647-BAC3-16AB49550E10 @default.
- Q63790558 P921 Q63790558-29F7FEAF-6547-43CB-9DBB-CD33EFD0EDFD @default.
- Q63790558 P356 S0022-0248(96)00629-X @default.
- Q63790558 P1433 Q1929756 @default.
- Q63790558 P1476 "In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers" @default.
- Q63790558 P2093 "K. Knorr" @default.
- Q63790558 P2093 "M. Zorn" @default.
- Q63790558 P2093 "N. Esser" @default.
- Q63790558 P2093 "U. Resch-Esser" @default.
- Q63790558 P2093 "W. Richter" @default.
- Q63790558 P2860 Q63790563 @default.
- Q63790558 P304 "230-236" @default.
- Q63790558 P31 Q13442814 @default.
- Q63790558 P356 "10.1016/S0022-0248(96)00629-X" @default.
- Q63790558 P433 "1-4" @default.
- Q63790558 P478 "170" @default.
- Q63790558 P50 Q56557657 @default.
- Q63790558 P577 "1997-01-01T00:00:00Z" @default.
- Q63790558 P921 Q214781 @default.