Matches in Wikidata for { <http://www.wikidata.org/entity/Q64017562> ?p ?o ?g. }
Showing items 1 to 39 of
39
with 100 items per page.
- Q64017562 description "im August 2015 veröffentlichter wissenschaftlicher Artikel" @default.
- Q64017562 description "wetenschappelijk artikel" @default.
- Q64017562 description "наукова стаття, опублікована в серпні 2015" @default.
- Q64017562 name "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 name "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 type Item @default.
- Q64017562 label "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 label "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 prefLabel "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 prefLabel "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 P1433 Q64017562-86A891B6-E7D3-4488-8E87-1B47B800869A @default.
- Q64017562 P1476 Q64017562-1B2465FD-DA9B-4901-9BB6-5B0BAC3117D9 @default.
- Q64017562 P2093 Q64017562-40FE5BF6-B645-4F0D-9302-C1748E9AFDB9 @default.
- Q64017562 P2093 Q64017562-6C52722C-BB31-43B6-91F7-033A7FE190D0 @default.
- Q64017562 P2093 Q64017562-E73F03C4-8333-43A0-9B2F-967B7B2B9D22 @default.
- Q64017562 P304 Q64017562-D6F12893-B2E9-40FE-8CF9-6096BF7E86D6 @default.
- Q64017562 P31 Q64017562-4AB65D8C-E2F8-46A7-B00A-975F6C32A2A8 @default.
- Q64017562 P356 Q64017562-71B24973-57B3-4DA2-92E1-CCCD339D0E7E @default.
- Q64017562 P433 Q64017562-A801B3A8-ED9F-439E-9523-2843C7B9E8B1 @default.
- Q64017562 P478 Q64017562-A68AA7A9-D569-4BE5-9EAD-0A380594C7A9 @default.
- Q64017562 P50 Q64017562-25368AE3-83A3-41EB-903D-D5FFF302FC37 @default.
- Q64017562 P50 Q64017562-35C1D400-357E-4497-BC1A-878EACA51118 @default.
- Q64017562 P50 Q64017562-F0C301EA-5565-4A10-8E53-277A8514C07C @default.
- Q64017562 P577 Q64017562-F13D2F0F-2E73-4522-B910-AF2DA0D4FA53 @default.
- Q64017562 P356 1.4927529 @default.
- Q64017562 P1433 Q621615 @default.
- Q64017562 P1476 "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode" @default.
- Q64017562 P2093 "Akira Fujiwara" @default.
- Q64017562 P2093 "Gary A. Steele" @default.
- Q64017562 P2093 "Herre S. J. van der Zant" @default.
- Q64017562 P304 "053101" @default.
- Q64017562 P31 Q13442814 @default.
- Q64017562 P356 "10.1063/1.4927529" @default.
- Q64017562 P433 "5" @default.
- Q64017562 P478 "107" @default.
- Q64017562 P50 Q30509223 @default.
- Q64017562 P50 Q57046588 @default.
- Q64017562 P50 Q62059756 @default.
- Q64017562 P577 "2015-08-03T00:00:00Z" @default.