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- Q67229527 description "im November 2014 veröffentlichter wissenschaftlicher Artikel" @default.
- Q67229527 description "wetenschappelijk artikel" @default.
- Q67229527 description "наукова стаття, опублікована в листопаді 2014" @default.
- Q67229527 name "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 name "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 type Item @default.
- Q67229527 label "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 label "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 prefLabel "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 prefLabel "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 P1433 Q67229527-3F3339A9-CC5B-49F6-BAEC-AC87678655AF @default.
- Q67229527 P1476 Q67229527-1F11B32A-56A0-4648-88AD-2D58998561C7 @default.
- Q67229527 P2093 Q67229527-1C54B7F6-74B6-415D-9497-F145A658D438 @default.
- Q67229527 P2093 Q67229527-53C0C630-D2E3-4D1E-91B6-DCE1EDE73328 @default.
- Q67229527 P2093 Q67229527-6E18BF53-FC03-48F4-BE4E-AEB19E57CA07 @default.
- Q67229527 P2093 Q67229527-B7534D03-638A-48A7-85C3-1944EB2F7236 @default.
- Q67229527 P2093 Q67229527-B9509117-E025-4356-BD66-2F6051414E08 @default.
- Q67229527 P2093 Q67229527-C58C7DEC-FA63-4E2F-AA7C-BB5C98AF1E95 @default.
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- Q67229527 P304 Q67229527-1B69E883-9BE9-42D5-99FA-AB72C596066C @default.
- Q67229527 P31 Q67229527-35C0368F-D88C-43E8-864A-9AEAE4EDDC72 @default.
- Q67229527 P356 Q67229527-8EF7D3C6-139A-421E-9B92-7ABE082D163C @default.
- Q67229527 P433 Q67229527-34A88CE3-7BB3-4A23-B669-29D610D1E2E8 @default.
- Q67229527 P478 Q67229527-8DC764F7-9246-418E-A55A-B10E22DCC097 @default.
- Q67229527 P577 Q67229527-82DF69D4-E92B-415C-8300-152C0F456E62 @default.
- Q67229527 P356 1.4901072 @default.
- Q67229527 P1433 Q621615 @default.
- Q67229527 P1476 "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory" @default.
- Q67229527 P2093 "Chen-Fang Kang" @default.
- Q67229527 P2093 "Chih-Hsiang Ho" @default.
- Q67229527 P2093 "Chuan-Pei Lee" @default.
- Q67229527 P2093 "Der-Hsien Lien" @default.
- Q67229527 P2093 "José Ramón Durán Retamal" @default.
- Q67229527 P2093 "Jr-Hau He" @default.
- Q67229527 P2093 "Po-Kang Yang" @default.
- Q67229527 P304 "182101" @default.
- Q67229527 P31 Q13442814 @default.
- Q67229527 P356 "10.1063/1.4901072" @default.
- Q67229527 P433 "18" @default.
- Q67229527 P478 "105" @default.
- Q67229527 P577 "2014-11-03T00:00:00Z" @default.