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- Q80358779 description "artículu científicu espublizáu en mayu de 1999" @default.
- Q80358779 description "im Mai 1999 veröffentlichter wissenschaftlicher Artikel" @default.
- Q80358779 description "scientific article published on 01 May 1999" @default.
- Q80358779 description "wetenschappelijk artikel" @default.
- Q80358779 description "наукова стаття, опублікована в травні 1999" @default.
- Q80358779 name "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 name "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 type Item @default.
- Q80358779 label "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 label "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 prefLabel "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 prefLabel "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 P1433 Q80358779-A29F6BC5-4CD1-4838-9F7B-9A873F595554 @default.
- Q80358779 P1476 Q80358779-14334A9B-F5D0-48B2-B746-186E47D82FCB @default.
- Q80358779 P2093 Q80358779-000B0A2B-D3A2-4221-81E6-0DFDDCFDC02A @default.
- Q80358779 P2093 Q80358779-3B592775-711C-49A7-AE99-61404862D3EB @default.
- Q80358779 P2093 Q80358779-400D23EB-76B4-456B-A661-46ECCE9113C8 @default.
- Q80358779 P2093 Q80358779-6EC5F601-FD1E-4DB2-8F3B-8CE46DEBBC5B @default.
- Q80358779 P2093 Q80358779-7DB5295E-7B17-4626-B418-651828A939B5 @default.
- Q80358779 P2093 Q80358779-A1954922-991F-43F9-ADA0-300FB370BC4B @default.
- Q80358779 P304 Q80358779-5E62F795-D0AB-48F7-9C4B-29BFC7D17698 @default.
- Q80358779 P31 Q80358779-29D9642B-2DFB-4103-81FE-8568CA57B2CC @default.
- Q80358779 P356 Q80358779-B0DCFD7B-50EB-4583-8641-B0F15C4949D2 @default.
- Q80358779 P433 Q80358779-2F12A9CA-B2E2-449E-9FC7-68E43D74093F @default.
- Q80358779 P478 Q80358779-AC40A3CE-8A43-4C20-8739-8C5F029A3E38 @default.
- Q80358779 P577 Q80358779-6522C1A9-FB25-496A-B75F-C161E7A21460 @default.
- Q80358779 P698 Q80358779-6DA03A3D-3170-4BCC-A9BA-E085422A3120 @default.
- Q80358779 P356 S0909049598015581 @default.
- Q80358779 P698 15263359 @default.
- Q80358779 P1433 Q2192131 @default.
- Q80358779 P1476 "Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy" @default.
- Q80358779 P2093 "Crozier ED" @default.
- Q80358779 P2093 "Gupta JA" @default.
- Q80358779 P2093 "Harrison DA" @default.
- Q80358779 P2093 "Karlin BA" @default.
- Q80358779 P2093 "Watkins SP" @default.
- Q80358779 P2093 "Woicik JC" @default.
- Q80358779 P304 "500-502" @default.
- Q80358779 P31 Q13442814 @default.
- Q80358779 P356 "10.1107/S0909049598015581" @default.
- Q80358779 P433 "Pt 3" @default.
- Q80358779 P478 "6" @default.
- Q80358779 P577 "1999-05-01T00:00:00Z" @default.
- Q80358779 P698 "15263359" @default.