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- Q82984094 description "artículu científicu espublizáu en febreru de 2010" @default.
- Q82984094 description "scientific article published on 22 February 2010" @default.
- Q82984094 description "wetenschappelijk artikel" @default.
- Q82984094 description "наукова стаття, опублікована в лютому 2010" @default.
- Q82984094 name "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 name "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 type Item @default.
- Q82984094 label "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 label "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 prefLabel "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 prefLabel "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 P1433 Q82984094-10117D7B-CBDD-44E4-8627-9E6E5107CC24 @default.
- Q82984094 P1476 Q82984094-0C3F6C98-F1E3-4172-A1DC-FD10DC52A13C @default.
- Q82984094 P2093 Q82984094-25401FD0-774A-41AE-8C35-1B26459014DF @default.
- Q82984094 P2093 Q82984094-33741D1D-C299-44D5-9FA8-79AF214C326E @default.
- Q82984094 P2093 Q82984094-E1D9BCF2-F2B7-492F-8C26-B7F54323448B @default.
- Q82984094 P304 Q82984094-673D7AE0-A21A-4F31-9299-DF8DDBCC469E @default.
- Q82984094 P31 Q82984094-9F7ED9E8-1492-43FC-A878-AAE8F2823F9B @default.
- Q82984094 P356 Q82984094-A32A3747-4A6D-463C-8BCC-10FFE3015837 @default.
- Q82984094 P433 Q82984094-EFBAE05F-CBF9-4B0F-A607-74CF0E310025 @default.
- Q82984094 P478 Q82984094-3F7D8E14-F201-47CD-A296-AC55BDC88079 @default.
- Q82984094 P577 Q82984094-E1A3CD2E-64C8-47EC-9CE2-4FB347228C76 @default.
- Q82984094 P698 Q82984094-08B37614-0C3E-4DEB-9075-755258147C26 @default.
- Q82984094 P356 115202 @default.
- Q82984094 P698 20173246 @default.
- Q82984094 P1433 Q972896 @default.
- Q82984094 P1476 "Ultrathin SiO2 layer with a low leakage current density formed with approximately 100% nitric acid vapor" @default.
- Q82984094 P2093 "Hikaru Kobayashi" @default.
- Q82984094 P2093 "Taketoshi Matsumoto" @default.
- Q82984094 P2093 "Woo-Byoung Kim" @default.
- Q82984094 P304 "115202" @default.
- Q82984094 P31 Q13442814 @default.
- Q82984094 P356 "10.1088/0957-4484/21/11/115202" @default.
- Q82984094 P433 "11" @default.
- Q82984094 P478 "21" @default.
- Q82984094 P577 "2010-02-22T00:00:00Z" @default.
- Q82984094 P698 "20173246" @default.