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- Q84249594 description "article scientifique publié en 2011" @default.
- Q84249594 description "artículu científicu espublizáu en xunu de 2011" @default.
- Q84249594 description "im Juni 2011 veröffentlichter wissenschaftlicher Artikel" @default.
- Q84249594 description "scientific article published on 15 June 2011" @default.
- Q84249594 description "wetenschappelijk artikel" @default.
- Q84249594 description "наукова стаття, опублікована в червні 2011" @default.
- Q84249594 name "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 name "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 type Item @default.
- Q84249594 label "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 label "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 prefLabel "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 prefLabel "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 P1433 Q84249594-D1452B06-B480-47FE-AC34-722C0A8D129A @default.
- Q84249594 P1476 Q84249594-8CA5871A-6597-4BED-A60E-6B2C2CC81586 @default.
- Q84249594 P2093 Q84249594-051A3665-3F29-4005-9073-4F8997FB7EFA @default.
- Q84249594 P2093 Q84249594-54E626E7-6EE0-4244-BC8B-2476C46ED977 @default.
- Q84249594 P2093 Q84249594-65FBE11D-4E41-43FC-85FA-72FA240D27F8 @default.
- Q84249594 P2093 Q84249594-A9336760-266A-4AEF-88A0-D51FE37078FA @default.
- Q84249594 P304 Q84249594-2274D855-20E1-4090-A425-6BA6FCF55096 @default.
- Q84249594 P31 Q84249594-6ACA652C-6337-4427-83BB-9BDA79D14642 @default.
- Q84249594 P356 Q84249594-82A3FA63-4810-465A-99DD-8AC3DEB19815 @default.
- Q84249594 P433 Q84249594-98A90184-B43B-4BCC-9BB4-0940356A2995 @default.
- Q84249594 P478 Q84249594-9F72D585-700F-40F4-AEF4-4B583B452F17 @default.
- Q84249594 P577 Q84249594-6B501894-BAE0-4244-92DF-8264AFA60526 @default.
- Q84249594 P698 Q84249594-5E0C3A58-28C1-4FA8-A0D0-39D4A925A793 @default.
- Q84249594 P356 AM2003284 @default.
- Q84249594 P698 21634796 @default.
- Q84249594 P1433 Q2819060 @default.
- Q84249594 P1476 "Formation of through-holes in Si wafers by using anodically polarized needle electrodes in HF solution" @default.
- Q84249594 P2093 "Chia-Lung Lee" @default.
- Q84249594 P2093 "Michio Matsumura" @default.
- Q84249594 P2093 "Shigeru Ikeda" @default.
- Q84249594 P2093 "Tomohiko Sugita" @default.
- Q84249594 P304 "2417-2424" @default.
- Q84249594 P31 Q13442814 @default.
- Q84249594 P356 "10.1021/AM2003284" @default.
- Q84249594 P433 "7" @default.
- Q84249594 P478 "3" @default.
- Q84249594 P577 "2011-06-15T00:00:00Z" @default.
- Q84249594 P698 "21634796" @default.