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- Q87080399 description "artículu científicu espublizáu n'abril de 2015" @default.
- Q87080399 description "scientific article published on 09 April 2015" @default.
- Q87080399 description "wetenschappelijk artikel" @default.
- Q87080399 description "наукова стаття, опублікована у квітні 2015" @default.
- Q87080399 name "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 name "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 type Item @default.
- Q87080399 label "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 label "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 prefLabel "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 prefLabel "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 P1433 Q87080399-C9E16EDE-8749-438C-96AF-F1D417AB9723 @default.
- Q87080399 P1476 Q87080399-B0B6DDFE-C74D-40E0-8D16-840A94A43855 @default.
- Q87080399 P2093 Q87080399-09E55217-628C-4CC9-9F9C-3932CB0D7BD5 @default.
- Q87080399 P2093 Q87080399-7F15A588-3965-4FF1-8865-BBD24EE9B314 @default.
- Q87080399 P2093 Q87080399-9972F7F6-F2AC-4949-8F81-7392E325CCEA @default.
- Q87080399 P2093 Q87080399-AFA950EF-ECCA-428A-AA59-6EACD506DC4C @default.
- Q87080399 P304 Q87080399-55D70000-50ED-44C0-B138-257EE31BCCF3 @default.
- Q87080399 P31 Q87080399-5F2A0EE2-4413-49F0-B83B-930D8F1A3C44 @default.
- Q87080399 P356 Q87080399-309B088B-8C57-4181-A886-1732DFE61A9E @default.
- Q87080399 P433 Q87080399-8EDC0D7F-CCD2-4BBB-BD37-B3A9A8422DAE @default.
- Q87080399 P478 Q87080399-A7E46387-E48B-453D-96EB-B7E6D28E65AE @default.
- Q87080399 P577 Q87080399-0E8A719C-B663-411D-9A20-9BFCEC61E46B @default.
- Q87080399 P698 Q87080399-1CD56ED8-E7B0-4F79-B0A5-36985D4A44BD @default.
- Q87080399 P818 Q87080399-080D44BD-400A-4A0E-B91D-3C60B9AE7A6B @default.
- Q87080399 P921 Q87080399-37FF80D6-CF6B-476F-B7ED-FF2D741A4951 @default.
- Q87080399 P356 175708 @default.
- Q87080399 P698 25854835 @default.
- Q87080399 P1433 Q972896 @default.
- Q87080399 P1476 "Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs" @default.
- Q87080399 P2093 "K Nagashio" @default.
- Q87080399 P2093 "K Watanabe" @default.
- Q87080399 P2093 "N Takahashi" @default.
- Q87080399 P2093 "T Taniguchi" @default.
- Q87080399 P304 "175708" @default.
- Q87080399 P31 Q13442814 @default.
- Q87080399 P356 "10.1088/0957-4484/26/17/175708" @default.
- Q87080399 P433 "17" @default.
- Q87080399 P478 "26" @default.
- Q87080399 P577 "2015-04-09T00:00:00Z" @default.
- Q87080399 P698 "25854835" @default.
- Q87080399 P818 "1510.01928" @default.
- Q87080399 P921 Q169917 @default.