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- Q90434313 description "artículu científicu espublizáu n'ochobre de 2019" @default.
- Q90434313 description "im Oktober 2019 veröffentlichter wissenschaftlicher Artikel" @default.
- Q90434313 description "scientific article published on 15 October 2019" @default.
- Q90434313 description "wetenschappelijk artikel" @default.
- Q90434313 description "наукова стаття, опублікована 15 жовтня 2019" @default.
- Q90434313 name "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 name "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 type Item @default.
- Q90434313 label "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 label "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 prefLabel "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 prefLabel "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 P1433 Q90434313-C730B1D0-AE42-4B82-9704-2C18264E39E4 @default.
- Q90434313 P1476 Q90434313-455D837D-4C93-4F56-AECB-F8319664A9F2 @default.
- Q90434313 P2093 Q90434313-1262B263-3F16-4E75-9B5D-24EEB06F3F43 @default.
- Q90434313 P2093 Q90434313-1B69EB31-5A67-4318-BB40-38F8C1C4BB28 @default.
- Q90434313 P2093 Q90434313-65333051-956F-486D-ADED-069618E63171 @default.
- Q90434313 P2093 Q90434313-B1786248-0FF9-473A-B240-68CA4496BA00 @default.
- Q90434313 P2093 Q90434313-B9E32B8F-A52B-4792-98FB-5C1DD8C7B549 @default.
- Q90434313 P2093 Q90434313-F5CCCFC1-DDDB-4823-964A-030EFCDA1867 @default.
- Q90434313 P304 Q90434313-1345A646-C7D2-47AB-9E37-87C627547F45 @default.
- Q90434313 P31 Q90434313-5C1FF1A3-D2E7-4C05-8806-98E5B7F53DF3 @default.
- Q90434313 P356 Q90434313-83DFAF05-CB6C-4A3F-901F-560368071C96 @default.
- Q90434313 P433 Q90434313-6911DAFC-58C5-406F-B991-1BC273B08DD6 @default.
- Q90434313 P478 Q90434313-31FE922F-B826-4F6A-85A3-C95655985D01 @default.
- Q90434313 P50 Q90434313-C456035F-7312-47E7-9AD6-D1348BF0F2C6 @default.
- Q90434313 P50 Q90434313-FF26FBCF-2598-4B83-B2FE-22A8BC40FC33 @default.
- Q90434313 P577 Q90434313-17929890-0E77-421A-B33C-139B9DFFACEF @default.
- Q90434313 P698 Q90434313-BA74D503-0D3E-4743-BF72-BE64913F3E62 @default.
- Q90434313 P356 ACSAMI.9B12186 @default.
- Q90434313 P698 31577123 @default.
- Q90434313 P1433 Q2819060 @default.
- Q90434313 P1476 "Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application" @default.
- Q90434313 P2093 "Aeran Song" @default.
- Q90434313 P2093 "Baekeun Yoo" @default.
- Q90434313 P2093 "Kwun-Bum Chung" @default.
- Q90434313 P2093 "Miso Lee" @default.
- Q90434313 P2093 "Seungwu Han" @default.
- Q90434313 P2093 "Taikyu Kim" @default.
- Q90434313 P304 "40214-40221" @default.
- Q90434313 P31 Q13442814 @default.
- Q90434313 P356 "10.1021/ACSAMI.9B12186" @default.
- Q90434313 P433 "43" @default.
- Q90434313 P478 "11" @default.
- Q90434313 P50 Q88671224 @default.
- Q90434313 P50 Q90434310 @default.
- Q90434313 P577 "2019-10-15T00:00:00Z" @default.
- Q90434313 P698 "31577123" @default.