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- Q90712567 description "article scientifique publié en 2019" @default.
- Q90712567 description "artículu científicu espublizáu n'ochobre de 2019" @default.
- Q90712567 description "scientific article published on 28 October 2019" @default.
- Q90712567 description "wetenschappelijk artikel" @default.
- Q90712567 description "наукова стаття, опублікована 28 жовтня 2019" @default.
- Q90712567 name "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
- Q90712567 name "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
- Q90712567 type Item @default.
- Q90712567 label "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
- Q90712567 label "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
- Q90712567 prefLabel "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
- Q90712567 prefLabel "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
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- Q90712567 P1476 Q90712567-CDDC6092-FCE8-4C2A-8A01-B1022EAA9465 @default.
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- Q90712567 P356 Q90712567-08E95F3E-002C-4D2E-9B6E-5C40FBDFC0DA @default.
- Q90712567 P433 Q90712567-1856BAE0-1AFB-4F39-B946-C3AA8B43828D @default.
- Q90712567 P478 Q90712567-3A704778-2C9B-4F38-AF44-973BA988C603 @default.
- Q90712567 P50 Q90712567-34DBAF4D-D5A3-49AD-8036-027EDD394957 @default.
- Q90712567 P50 Q90712567-809A8CCA-70E0-42B2-BC67-B93A73727CC8 @default.
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- Q90712567 P698 Q90712567-511D4181-0427-4E1D-B8E2-C13A519ECAB9 @default.
- Q90712567 P356 ACSAMI.9B14293 @default.
- Q90712567 P698 31613087 @default.
- Q90712567 P1433 Q2819060 @default.
- Q90712567 P1476 "Level the Conversion/Alloying Voltage Gap by Grafting the Endogenetic Sb2Te3 Building Block into Layered GeTe to Build Ge2Sb2Te5 for Li-Ion Batteries" @default.
- Q90712567 P2093 "Jiajun Chen" @default.
- Q90712567 P2093 "Siqi Wang" @default.
- Q90712567 P2093 "Yanpeng Guo" @default.
- Q90712567 P2093 "Yaqing Wei" @default.
- Q90712567 P304 "41374-41382" @default.
- Q90712567 P31 Q13442814 @default.
- Q90712567 P356 "10.1021/ACSAMI.9B14293" @default.
- Q90712567 P433 "44" @default.
- Q90712567 P478 "11" @default.
- Q90712567 P50 Q48903112 @default.
- Q90712567 P50 Q58671208 @default.
- Q90712567 P50 Q59868325 @default.
- Q90712567 P577 "2019-10-28T00:00:00Z" @default.
- Q90712567 P698 "31613087" @default.