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- Q91253796 description "article scientifique publié en 2019" @default.
- Q91253796 description "artículu científicu espublizáu n'ochobre de 2019" @default.
- Q91253796 description "im Oktober 2019 veröffentlichter wissenschaftlicher Artikel" @default.
- Q91253796 description "scientific article published on 26 October 2019" @default.
- Q91253796 description "wetenschappelijk artikel" @default.
- Q91253796 description "наукова стаття, опублікована 26 жовтня 2019" @default.
- Q91253796 name "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
- Q91253796 name "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
- Q91253796 type Item @default.
- Q91253796 label "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
- Q91253796 label "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
- Q91253796 prefLabel "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
- Q91253796 prefLabel "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
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- Q91253796 P698 31717725 @default.
- Q91253796 P1433 Q27725910 @default.
- Q91253796 P1476 "Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" @default.
- Q91253796 P2093 "Dongmin Keum" @default.
- Q91253796 P275 Q20007257 @default.
- Q91253796 P31 Q13442814 @default.
- Q91253796 P356 "10.3390/MI10110723" @default.
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- Q91253796 P478 "10" @default.
- Q91253796 P50 Q91253794 @default.
- Q91253796 P577 "2019-10-26T00:00:00Z" @default.
- Q91253796 P6216 Q50423863 @default.
- Q91253796 P698 "31717725" @default.
- Q91253796 P932 "6915387" @default.