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- Q91547968 description "artículu científicu espublizáu n'ochobre de 2019" @default.
- Q91547968 description "scientific article published on 01 October 2019" @default.
- Q91547968 description "wetenschappelijk artikel" @default.
- Q91547968 description "наукова стаття, опублікована 1 жовтня 2019" @default.
- Q91547968 name "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 name "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 type Item @default.
- Q91547968 label "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 label "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 prefLabel "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 prefLabel "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 P1433 Q91547968-14C26AB5-A4B2-4C2C-9ECD-485F1C51AEF3 @default.
- Q91547968 P1476 Q91547968-0473478F-430B-45E9-87CD-77173CA5FBAE @default.
- Q91547968 P2093 Q91547968-03A2765F-A5E6-4488-AC43-D11D26F7F0EA @default.
- Q91547968 P2093 Q91547968-2C30E036-1186-4F81-818E-E65AE2DF45BC @default.
- Q91547968 P2093 Q91547968-3D1FE07F-CA89-4F16-A90F-86176921180A @default.
- Q91547968 P2093 Q91547968-62FABCB0-C62E-41DF-9B2D-73A22CAB429C @default.
- Q91547968 P304 Q91547968-684D415A-4716-4440-9CBE-07D3B792D878 @default.
- Q91547968 P31 Q91547968-1D405D5F-1C23-4293-B424-FCD83DB49005 @default.
- Q91547968 P356 Q91547968-C3E887B7-18C5-4422-A087-F99261CE8FB3 @default.
- Q91547968 P433 Q91547968-47B86F86-63A7-42D6-AFB4-077855F99144 @default.
- Q91547968 P478 Q91547968-75FDA7B4-F208-44F2-A7AD-283CB2BF6224 @default.
- Q91547968 P577 Q91547968-5001B9C5-0875-4C58-9CFD-940411A62853 @default.
- Q91547968 P698 Q91547968-473E6B77-E4B3-4F19-9578-2EED18A8DBF3 @default.
- Q91547968 P356 JNN.2019.17113 @default.
- Q91547968 P698 31027019 @default.
- Q91547968 P1433 Q2364336 @default.
- Q91547968 P1476 "Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4" @default.
- Q91547968 P2093 "Chan Ho Park" @default.
- Q91547968 P2093 "Ji-Woon Yang" @default.
- Q91547968 P2093 "Jun Hyeok Kim" @default.
- Q91547968 P2093 "Sung Moo Kim" @default.
- Q91547968 P304 "6732-6735" @default.
- Q91547968 P31 Q13442814 @default.
- Q91547968 P356 "10.1166/JNN.2019.17113" @default.
- Q91547968 P433 "10" @default.
- Q91547968 P478 "19" @default.
- Q91547968 P577 "2019-10-01T00:00:00Z" @default.
- Q91547968 P698 "31027019" @default.