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- Q91795942 description "artículu científicu espublizáu en mayu de 2019" @default.
- Q91795942 description "im Mai 2019 veröffentlichter wissenschaftlicher Artikel" @default.
- Q91795942 description "scientific article published on 04 May 2019" @default.
- Q91795942 description "wetenschappelijk artikel" @default.
- Q91795942 description "наукова стаття, опублікована 4 травня 2019" @default.
- Q91795942 name "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
- Q91795942 name "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
- Q91795942 type Item @default.
- Q91795942 label "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
- Q91795942 label "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
- Q91795942 prefLabel "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
- Q91795942 prefLabel "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
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- Q91795942 P356 NANO9050697 @default.
- Q91795942 P698 31060261 @default.
- Q91795942 P1433 Q27724944 @default.
- Q91795942 P1476 "Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer" @default.
- Q91795942 P2093 "Yongte Wang" @default.
- Q91795942 P275 Q20007257 @default.
- Q91795942 P2860 Q60053824 @default.
- Q91795942 P31 Q13442814 @default.
- Q91795942 P356 "10.3390/NANO9050697" @default.
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- Q91795942 P577 "2019-05-04T00:00:00Z" @default.
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