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- Q91872604 description "article scientifique publié en 2019" @default.
- Q91872604 description "artículu científicu espublizáu en xunetu de 2019" @default.
- Q91872604 description "scientific article published on 25 July 2019" @default.
- Q91872604 description "wetenschappelijk artikel" @default.
- Q91872604 description "наукова стаття, опублікована 25 липня 2019" @default.
- Q91872604 name "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 name "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 type Item @default.
- Q91872604 label "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 label "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 prefLabel "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 prefLabel "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 P1433 Q91872604-78E3D723-0430-49D8-A27D-865369CA68C3 @default.
- Q91872604 P1476 Q91872604-94A4D320-21F8-4A15-B11A-1AE9C45880AF @default.
- Q91872604 P2093 Q91872604-0FA7DF55-E2BC-47E7-88BC-F4A205E3DF30 @default.
- Q91872604 P2093 Q91872604-28BDD544-0D86-434C-8C10-6779CD94FED9 @default.
- Q91872604 P2093 Q91872604-89FF8BFC-F205-4410-8FF4-19743BBC271B @default.
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- Q91872604 P304 Q91872604-AB693D0E-8170-4135-BE29-3FBF7D9D8433 @default.
- Q91872604 P31 Q91872604-8D054909-BEAB-470F-92F5-6501BCCCD35F @default.
- Q91872604 P356 Q91872604-09E24F44-51B9-458A-85C7-52F30CEDDBEA @default.
- Q91872604 P433 Q91872604-989CADD4-9BE3-449F-9DCF-396C7F2E3B32 @default.
- Q91872604 P478 Q91872604-13EDD50E-B511-4043-BAE5-DDCBC18AC6E9 @default.
- Q91872604 P50 Q91872604-B7203477-38AB-42F5-933D-DFD278EDBA2E @default.
- Q91872604 P577 Q91872604-F7F3E8D9-7777-42DC-A2E6-2A178F68560B @default.
- Q91872604 P698 Q91872604-C8DD532C-0F4E-4ADF-A892-CDAA67065F27 @default.
- Q91872604 P356 ACSAMI.9B06696 @default.
- Q91872604 P698 31304734 @default.
- Q91872604 P1433 Q2819060 @default.
- Q91872604 P1476 "Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure" @default.
- Q91872604 P2093 "Dong Su Kim" @default.
- Q91872604 P2093 "Nishad G Deshpande" @default.
- Q91872604 P2093 "Sung Hyeon Jung" @default.
- Q91872604 P2093 "Young Been Kim" @default.
- Q91872604 P304 "28397-28406" @default.
- Q91872604 P31 Q13442814 @default.
- Q91872604 P356 "10.1021/ACSAMI.9B06696" @default.
- Q91872604 P433 "31" @default.
- Q91872604 P478 "11" @default.
- Q91872604 P50 Q56642484 @default.
- Q91872604 P577 "2019-07-25T00:00:00Z" @default.
- Q91872604 P698 "31304734" @default.