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- Q92629770 description "article scientifique publié en 2019" @default.
- Q92629770 description "artículu científicu espublizáu en marzu de 2019" @default.
- Q92629770 description "scientific article published on 26 March 2019" @default.
- Q92629770 description "wetenschappelijk artikel" @default.
- Q92629770 description "наукова стаття, опублікована 26 березня 2019" @default.
- Q92629770 name "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 name "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 type Item @default.
- Q92629770 label "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 label "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 prefLabel "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 prefLabel "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 P1433 Q92629770-6FE3516D-F990-4DBD-8E95-16573A8E20DB @default.
- Q92629770 P1476 Q92629770-4474B10C-1687-4CAA-95EF-431D6004B201 @default.
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- Q92629770 P2093 Q92629770-75512FBD-F0C0-4AA7-89C9-B4BB32717477 @default.
- Q92629770 P2093 Q92629770-B591AC6E-33ED-47E6-92B5-129B68B94179 @default.
- Q92629770 P2093 Q92629770-CB836C93-948A-40EC-970D-04A1BAC36FA4 @default.
- Q92629770 P304 Q92629770-1A0962E1-F704-4766-8F3D-4A3BF5A7278E @default.
- Q92629770 P31 Q92629770-A6D7211E-C1FA-4BD6-B716-18DAFDA999F7 @default.
- Q92629770 P356 Q92629770-A1A41B71-9BC4-40E4-AC23-600561363544 @default.
- Q92629770 P433 Q92629770-C90B9367-70CC-48DF-8F39-0F308B8A8E48 @default.
- Q92629770 P478 Q92629770-FB2E4815-71F0-41DD-8432-5B62F8972119 @default.
- Q92629770 P577 Q92629770-850F9FC5-97FD-4B65-950C-CD895D365815 @default.
- Q92629770 P698 Q92629770-A534BF44-7BC3-4E8A-8BF2-1A495159C4DA @default.
- Q92629770 P921 Q92629770-E82396DB-F2CC-4AFD-A191-2918F45DC539 @default.
- Q92629770 P356 AB135F @default.
- Q92629770 P698 30913543 @default.
- Q92629770 P1433 Q972896 @default.
- Q92629770 P1476 "Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation" @default.
- Q92629770 P2093 "Cheng-Yen Wen" @default.
- Q92629770 P2093 "Hsin-Yu Lee" @default.
- Q92629770 P2093 "I-Ta Wang" @default.
- Q92629770 P2093 "Yu-Tao Sun" @default.
- Q92629770 P304 "284002" @default.
- Q92629770 P31 Q13442814 @default.
- Q92629770 P356 "10.1088/1361-6528/AB135F" @default.
- Q92629770 P433 "28" @default.
- Q92629770 P478 "30" @default.
- Q92629770 P577 "2019-03-26T00:00:00Z" @default.
- Q92629770 P698 "30913543" @default.
- Q92629770 P921 Q631739 @default.