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- Q92728509 description "artículu científicu espublizáu n'avientu de 2019" @default.
- Q92728509 description "scientific article published on 01 December 2019" @default.
- Q92728509 description "wetenschappelijk artikel" @default.
- Q92728509 description "наукова стаття, опублікована 1 грудня 2019" @default.
- Q92728509 name "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 name "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 type Item @default.
- Q92728509 label "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 label "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 prefLabel "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 prefLabel "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 P1433 Q92728509-CD31210E-2F85-47E3-B501-CCC71DDB9EFB @default.
- Q92728509 P1476 Q92728509-1520B715-66DD-45F2-8F34-1DA992BAD817 @default.
- Q92728509 P2093 Q92728509-3209B46B-23F0-4FDE-939E-32FFECD0BC71 @default.
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- Q92728509 P2093 Q92728509-CDE9D8CA-F04A-443C-AB09-FFD4FA39CC1D @default.
- Q92728509 P2093 Q92728509-D4A297D0-7E94-4CD4-8207-DCA9B6D7F519 @default.
- Q92728509 P2093 Q92728509-D5744B48-0A64-4698-A115-7F5C64654009 @default.
- Q92728509 P2093 Q92728509-E6EE9AA3-E795-48E7-BE45-013D88FB0BB8 @default.
- Q92728509 P304 Q92728509-136B8CD4-4E7A-42BB-96AD-F5B120C9CE97 @default.
- Q92728509 P31 Q92728509-34F0A4AE-6901-4598-A7DB-87EBC3B5F5CF @default.
- Q92728509 P356 Q92728509-D7D71BBA-1830-454C-8C7A-35FD742B23BC @default.
- Q92728509 P433 Q92728509-FECB391A-E3A1-4B84-A6AA-38C21794EDEA @default.
- Q92728509 P478 Q92728509-68DC91FF-ECAD-454F-A8AD-007658F5AD74 @default.
- Q92728509 P577 Q92728509-7C970264-A00C-4B3D-9261-80E6B217B1FD @default.
- Q92728509 P698 Q92728509-203F4E03-31B5-4148-BF4C-915800E6C0BC @default.
- Q92728509 P356 JNN.2019.16759 @default.
- Q92728509 P698 31196325 @default.
- Q92728509 P1433 Q2364336 @default.
- Q92728509 P1476 "Resistive Switching Mechanism of HfO₂ Based Resistance Random Access Memory Devices with Different Electrode Materials" @default.
- Q92728509 P2093 "C Sun" @default.
- Q92728509 P2093 "F Jin" @default.
- Q92728509 P2093 "J L Song" @default.
- Q92728509 P2093 "K F Dong" @default.
- Q92728509 P2093 "S M Lu" @default.
- Q92728509 P2093 "W Q Mo" @default.
- Q92728509 P304 "8045-8051" @default.
- Q92728509 P31 Q13442814 @default.
- Q92728509 P356 "10.1166/JNN.2019.16759" @default.
- Q92728509 P433 "12" @default.
- Q92728509 P478 "19" @default.
- Q92728509 P577 "2019-12-01T00:00:00Z" @default.
- Q92728509 P698 "31196325" @default.