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- Q92852957 description "artículu científicu espublizáu en xunetu de 2020" @default.
- Q92852957 description "scientific article published on 01 July 2020" @default.
- Q92852957 description "wetenschappelijk artikel" @default.
- Q92852957 description "наукова стаття, опублікована 1 липня 2020" @default.
- Q92852957 name "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 name "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 type Item @default.
- Q92852957 label "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 label "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 prefLabel "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 prefLabel "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 P1433 Q92852957-5E4E3F65-B31C-4928-901A-84A2D49798DE @default.
- Q92852957 P1476 Q92852957-CFA6CD1E-FD62-4FB5-8ADD-7A3AEC4DDDE1 @default.
- Q92852957 P2093 Q92852957-0BC375CC-D081-4DE2-9B38-F765940D34E6 @default.
- Q92852957 P2093 Q92852957-AE8D4A20-35CE-4903-AF08-1DD1E4745946 @default.
- Q92852957 P2093 Q92852957-E16497E7-73C3-4F19-B045-EF79F0B00DD4 @default.
- Q92852957 P2093 Q92852957-E8F828A3-1FE5-4AF4-86F5-E7A60B3A9A57 @default.
- Q92852957 P2093 Q92852957-EA4C8843-9BA8-482E-925C-7C6D0F43AB15 @default.
- Q92852957 P304 Q92852957-CA4D7747-1141-4CE2-AFA1-0859487D9A98 @default.
- Q92852957 P31 Q92852957-C6631EC3-0BDB-4EE4-A99D-96C4A957437B @default.
- Q92852957 P356 Q92852957-8E0E5265-6BB4-45DA-B732-16E7AB789777 @default.
- Q92852957 P433 Q92852957-0E50C739-FDF4-4015-907F-5E09B19343B6 @default.
- Q92852957 P478 Q92852957-21C28A35-2AC6-4AB9-9F4B-7B022BFC97A6 @default.
- Q92852957 P577 Q92852957-73279911-AF23-41A0-BC35-E27BA594891D @default.
- Q92852957 P698 Q92852957-34A674D9-8495-45F0-8048-A833CDFBDF28 @default.
- Q92852957 P921 Q92852957-865FD906-2D04-43DD-9D5C-EDDDAD51FEC3 @default.
- Q92852957 P356 JNN.2020.17783 @default.
- Q92852957 P698 31968436 @default.
- Q92852957 P1433 Q2364336 @default.
- Q92852957 P1476 "Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures" @default.
- Q92852957 P2093 "Eun Soo Nam" @default.
- Q92852957 P2093 "Hyung Seok Lee" @default.
- Q92852957 P2093 "Jong-Won Lim" @default.
- Q92852957 P2093 "Sung-Bum Bae" @default.
- Q92852957 P2093 "Zin-Sig Kim" @default.
- Q92852957 P304 "4170-4175" @default.
- Q92852957 P31 Q13442814 @default.
- Q92852957 P356 "10.1166/JNN.2020.17783" @default.
- Q92852957 P433 "7" @default.
- Q92852957 P478 "20" @default.
- Q92852957 P577 "2020-07-01T00:00:00Z" @default.
- Q92852957 P698 "31968436" @default.
- Q92852957 P921 Q176097 @default.