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- Q99408347 description "artículu científicu espublizáu n'agostu de 2020" @default.
- Q99408347 description "im August 2020 veröffentlichter wissenschaftlicher Artikel" @default.
- Q99408347 description "scientific article published on 26 August 2020" @default.
- Q99408347 description "wetenschappelijk artikel" @default.
- Q99408347 description "наукова стаття, опублікована 26 серпня 2020" @default.
- Q99408347 name "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 name "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 type Item @default.
- Q99408347 label "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 label "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 prefLabel "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 prefLabel "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 P1433 Q99408347-59A1763F-1571-4ACD-9CA9-B19AB7C6A07A @default.
- Q99408347 P1476 Q99408347-9C30744D-C2B3-4812-ADAC-F9D8E45E6326 @default.
- Q99408347 P2093 Q99408347-14A8C104-2A73-45FE-AF10-6093263947F8 @default.
- Q99408347 P2093 Q99408347-20A61809-40EE-42E0-B0D2-D8DAFCE5263F @default.
- Q99408347 P2093 Q99408347-76B38D5D-2AA9-4242-BD63-F48D9FC39781 @default.
- Q99408347 P2093 Q99408347-B90E5E6C-CFBB-4FB9-AB41-DDB67290DCBB @default.
- Q99408347 P2507 Q99408347-C048C36B-B220-4B36-BE7A-03CF63DD717D @default.
- Q99408347 P304 Q99408347-38F5F56B-F3B5-4F1A-B54B-FB9C2536A698 @default.
- Q99408347 P31 Q99408347-E4B5A431-243B-4841-B11A-5A3FC7CFEB61 @default.
- Q99408347 P356 Q99408347-930BB288-F06A-45AB-AE33-1FB070D9D3E3 @default.
- Q99408347 P433 Q99408347-B3F57DDA-1537-4317-ABC4-E5A41C55412A @default.
- Q99408347 P478 Q99408347-194A4E8B-4157-4355-A26F-22D1E042114F @default.
- Q99408347 P577 Q99408347-6D4BD015-AA60-49E3-9625-4F24E609D89A @default.
- Q99408347 P698 Q99408347-01C2DADE-77CA-45B2-8959-7EBDA77CFF25 @default.
- Q99408347 P921 Q99408347-7D8E15F3-CEE5-4702-BF59-3D70F739FEA0 @default.
- Q99408347 P356 ACSOMEGA.0C02132 @default.
- Q99408347 P698 32923769 @default.
- Q99408347 P1433 Q27727647 @default.
- Q99408347 P1476 "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices" @default.
- Q99408347 P2093 "Bipin Kumar Gupta" @default.
- Q99408347 P2093 "Girija Shankar Papanai" @default.
- Q99408347 P2093 "Indu Sharma" @default.
- Q99408347 P2093 "Sharon Jyotika Paul" @default.
- Q99408347 P2507 Q100728984 @default.
- Q99408347 P304 "22109-22118" @default.
- Q99408347 P31 Q13442814 @default.
- Q99408347 P356 "10.1021/ACSOMEGA.0C02132" @default.
- Q99408347 P433 "35" @default.
- Q99408347 P478 "5" @default.
- Q99408347 P577 "2020-08-26T00:00:00Z" @default.
- Q99408347 P698 "32923769" @default.
- Q99408347 P921 Q169917 @default.