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- W1004094579 abstract "Kutatasaimban harom fontos atomi folyamatra mutattam ra a besugarzott SiC-ban: az antisite-ok, a vakanciak, valamint a szen-intersticialisok aggregacioja. A szamitasaim reszben egy időben mutattak ki a kiserletekkel egyutt ezeket, vagy előre megjosoltak. Megmutattam, hogy ezen hibak altalaban elektromosan aktivak, es korabban mar reszben eszleltek azokat. A divakancia azonositasa PRL-ben jelent meg, illetve szen antisite-vakancia par azonositasa is ugyanolyan fontos eredmeny mind elmeleti mind gyakorlati szempontbol. A p-tipusu adalekok es szen-intersticialisok komplexumai szinten letrehozhatnak termikusan stabil, parazita hibakat szamitasaink szerint a besugarzott SiC-ban, amelyet kesőbb a kiserletek is megerősitettek. A fentiek mellett a foszfor donor CVD-beli novesztesenek megertesehez, valamint az azonositasahoz jarultam lenyegesen hozza. Tisztaztuk, hogy melyek a SiC/SiO2 hatarfeluleten előfordulo legfontosabb hibak, es azok hogyan befolyasoljak a SiC elektronszerkezetet. Emellett megvizsgaltuk egy hipotetikus szuperracs elektromos es optikai tulajdonsagait, amely u.n. polaritasvaltasos hibakat tartalmaz. Megmutattuk, hogy nm alatti ultravekony 2D elektron- es lyukgazt lehet igy letrehozni. Emellett ez egy polarizacios szuperracsot alkot, ahol az effektiv tiltottsav-szelesseget lehet szabalyozni. Emiatt kulonleges nem-linearis optikai tulajdonsagokkal is rendelkezik. Szamitasaink szerint atomi reteglevalasztas modszerevel a fenti szuperracs megvalosithato. | In my studies I pointed out three basic processes at atomistic level in irradiated SiC: aggregation of antisites, vacancies and carbon self-interstitials. This was shown partly simultanuously with the experiments, or those have been predicted by my calculations. I found that these defects are usually electrically active, and some of them have been already detected. The identification of divacancy was published in PRL, while the identification of carbon antisite-vacancy pair is also very important result from both theoretical and technological point of view. Our calculations indicated that the complex of p-type dopants and carbon interstitials can also form thermally stable, parasite defects in irradiated SiC, that has been confirmed later in the experiments. Beside that our calculation significantly contributed to the understanding of doping of phosphorous in CVD chamber as well as in its identifiation. We found the most important defects at the interface of SiC/SiO2 and how those affected the electronic structure of SiC. In addition, we have investigated the electrical and optical properties of an hypothetical superlattice that contains so-called polarity-change defects. We showed that 2D electron and hole gases are formed under nm thickness. This forms also a polarization superlattice, in that the effective band gap can be controlled. It possesses peculiar non-linear optical properties. Our calculations showed that this superlattice can be grown by atomic layer epitaxy." @default.
- W1004094579 created "2016-06-24" @default.
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- W1004094579 date "2007-01-01" @default.
- W1004094579 modified "2023-09-28" @default.
- W1004094579 title "Besugárzással létrehozott ponthiba és ponthibaagglomerátumok, valamint ezek optikai tulajdonságokra gyakorolt hatásának elméleti vizsgálata szilíciumkarbidban = Theoretical investigation of point defects, their agglomerates and their effects on optical properties in irradiated silicon carbide by means of quantum mechanical calculations" @default.
- W1004094579 hasPublicationYear "2007" @default.
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