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• W1006237961 abstract "This chapter discusses that conventional vapor-phase epitaxy can be described by using simple thermodynamic and statistical models. From simple binary compounds to more complex quaternary alloys, the progression is described. The chapter shows that satisfactory agreement can be found between experimental data and theory. This first understanding of the behavior of conventional vapor-phase epitaxy (VPE) reactors was a necessary condition to improve the quality and the reproducibility of grown materials. However, this understanding is insufficient for a more global knowledge of epitaxy mechanisms, and much hard work still remains to achieve this goal. First, impurity incorporation is not well understood, although thermodynamic treatments have been proposed. Second, the growth mechanisms of alloys remain unknown. It is hoped that future contributors will make our understanding of vapor-phase epitaxy more complete." @default.
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• W1006237961 date "1985-01-01" @default.
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• W1006237961 title "Chapter 4 Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs" @default.
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• W1006237961 doi "https://doi.org/10.1016/s0080-8784(08)62931-2" @default.
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