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- W100649937 abstract "Si-pn-junctions were fabricated by the SDB-technique. The buried interfaces were characterized by different methods: current-voltage characteristics, optical- and electron beam induced current (OBIC, EBIC), electroluminescence (EL) and by transmission-x-ray-topography (TXRT). The experimental results of the combination of the different methods are discussed and give a characterization of the SDB-interface." @default.
- W100649937 created "2016-06-24" @default.
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- W100649937 creator A5065968447 @default.
- W100649937 date "1989-01-01" @default.
- W100649937 modified "2023-09-23" @default.
- W100649937 title "Characterization of the Interface of Silicon pn-Junctions, Fabricated by the Silicon Direct Bonding (SDB) Method" @default.
- W100649937 cites W2006465965 @default.
- W100649937 cites W2008400236 @default.
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- W100649937 doi "https://doi.org/10.1007/978-3-642-93413-1_30" @default.
- W100649937 hasPublicationYear "1989" @default.
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