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• W1008857139 abstract "Publisher Summary This chapter traces the evolution of Gallium Arsenide Transistors (GaAs) and diffusion techniques. The earliest GaAs transistors were npn mesa structures which were produced by alloying a tin emitter into a diffused p-type base. One fact that emerged from early work is that measurements of carrier concentrations and conductivities of GaAs slices were insufficient to determine whether good or bad transistors could be made from the slice. Although substantial progress has been made in the quality of GaAs, the problem of irreproducibility still plagues GaAs devices. The next stage in the development of the transistor is to evaporate the emitter and base contacting alloys as stripes using a metal mask to define the areas. The slice was then given a thin coating of silica, which reduced the tendency of the stripes to ball up on alloying. The post-alloyed diffusion process which had worked well for germanium transistors did not produce transistors when applied to GaAs. It is illuminating to consider why this process would be expected to fail in the case of GaAs, which, by virtue of its large energy gap, could be extrinsic at diffusion temperatures. Further, it is described how the base diffusion can be carried out in a sealed silica capsule, the method includes base diffusion techniques and emitter diffusion techniques. Emitter windows are etched out by photoresist techniques using buffered hydrofluoric acid and the emitter diffusion is also performed in a closed system. An interesting technique, but one in which it might be difficult to achieve reproducibility, has been described whereby the emitter and base diffusions are performed simultaneously using doped silica films as the source of the diffusant. The exercise of producing a planar transistor in an epitaxial layer grown on a semi-insulating substrate is carried out and average current gains of about seven are obtained." @default.
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• W1008857139 date "1971-01-01" @default.
• W1008857139 modified "2023-09-26" @default.
• W1008857139 title "Chapter 5 Gallium Arsenide Transistors" @default.
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• W1008857139 doi "https://doi.org/10.1016/s0080-8784(08)63010-0" @default.
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