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- W1017626232 abstract "To study the formation of the SiO2 layer, thermal oxidation experiments were done. The plots indicate that the oxide thickness depends on the particle diameter. The smaller particles have less tendency to oxidize, indicating that smaller particles are more stable. This observation was contrary to the generally understood behavior of ultrafine particles (UFP). To obtain a rate equation for an oxidation reaction, the diffusion of oxygen gas to the particle surface, the diffusion of oxygen within the oxide layer, and reaction at the surface of the unreacted silicon core must be taken into account. In addition, the reaction product from the oxidation of silicon experiences an increase in its volume, so extra space for the formation of SiO2 is needed at the silicon surface. This should lead to the formation of internal stress at the silicon surface as the oxide layer is formed. Electron microscopy allows for the observation of specific parts of a particle, such as ridges and corners. Because of these features, the oxidation phenomenon of silicon UFPs was examined using HREM techniques. In the silicon microelectronics industry, the control of the oxidation reaction of silicon at microscopic dimensions is an important process." @default.
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- W1017626232 date "1995-01-01" @default.
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- W1017626232 title "Surface Oxidation of Silicon Ultra-Fine Particles" @default.
- W1017626232 cites W1981341546 @default.
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- W1017626232 doi "https://doi.org/10.1016/b978-081551404-6.50013-4" @default.
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