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- W1020278317 abstract "Publisher Summary This chapter explains the maskless ion implanter that brings out the powerful ability in impurity doping. The marked features of focused ion beam (FIB) implantation technology for p- and n- type impurity doping in gallium arsenide (GaAs) are described. Its application to attractive processes such as isolation of active layers by forming semi-insulating GaAs, compositional disordering of GaAs/AlGaAs (aluminiumGaAs) superlattice structure, and pattern-doped crystal growth by a combination of equipment with molecular beam epitaxy is also shown. Maskless ion implantation by scanning a focused ion beam method has various advantages over the conventional implantation with a broad ion beam. Fine pattern doping in crystal can be performed without a mask. The troublesome photolithography for forming a mask on a wafer and subsequent cleaning steps are reduced, making possible the realization of drastically simple device fabrication processes. Using an alloyed liquid metal (LM) ion source, successive interchanging doping with ions for p- and n- type, and for isolation is done by changing the electric field of an ExB mass separator. Arbitrary lateral and depth doping profiles are formed by controlling dwell time and accelerating voltage of ion beams with computer software." @default.
- W1020278317 created "2016-06-24" @default.
- W1020278317 creator A5037026013 @default.
- W1020278317 date "1990-01-01" @default.
- W1020278317 modified "2023-09-27" @default.
- W1020278317 title "Chapter 2 Focused Ion Beam Implantation TechnologyS" @default.
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- W1020278317 doi "https://doi.org/10.1016/s0080-8784(08)60093-9" @default.
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