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- W102453948 abstract "In the first part, we introduced experimental results of the internal quantum efficiency (IQE) droop depending on temperature in both the electroluminescence and the resonant photoluminescence. The IQE droop mechanisms ever reported are reviewed. An inherent origin of the efficiency droop is suggested to be the saturation of the radiative recombination rate in the InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. The degree of saturation is largely influenced by operating temperature and the effective active volume. Although the saturation of the radiative recombination rate is the common origin of the IQE droop, the shapes of the IQE versus current, i.e. the IQE droop curve, vary with the dominant nonradiative recombination process. In the second part, we have reviewed the IQE measurement methods theoretically as well as experimentally. A simple IQE estimation method based on the constant ABC model in the carrier rate equation is introduced in terms of its convenience and application limitation. Other methods have been also reviewed by focusing on all-optical methods such as the temperature-dependent photoluminescence (TDPL) and the temperature-dependent time-resolved photoluminescence (TD-TRPL) methods." @default.
- W102453948 created "2016-06-24" @default.
- W102453948 creator A5018382486 @default.
- W102453948 date "2013-01-01" @default.
- W102453948 modified "2023-09-23" @default.
- W102453948 title "Active Region Part B. Internal Quantum Efficiency" @default.
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- W102453948 doi "https://doi.org/10.1007/978-94-007-5863-6_7" @default.
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