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- W1025931554 endingPage "828" @default.
- W1025931554 startingPage "823" @default.
- W1025931554 abstract "利用多层溅射技术制备了ＷＳｉ x ／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉ x 薄膜中Ｗ 5 Ｓｉ 3 四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。" @default.
- W1025931554 created "2016-06-24" @default.
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- W1025931554 date "1994-05-20" @default.
- W1025931554 modified "2023-09-24" @default.
- W1025931554 title "多层溅射制备Wsi x /Si薄膜的电阻率特性研究" @default.
- W1025931554 hasPublicationYear "1994" @default.
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