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- W102804711 abstract "Hydrogen is one of the most common impurities in electronics technology with profound and very versatile influence on the electronic characteristics of the semiconductor material. It is of special importance in the case of SiC. Due to the difficulties with bulk crystal growth and diffusion doping, in-growth doped homoepitaxial layers prepared by chemical vapor deposition (CVD) play a crucial role in device processing. Hydrogen is, of course, a natural contaminant of such layers. Even though consequences of this fact have been anticipated, at the time of writing the most recent comprehensive review [1] about state of the art in SiC research, the information about the properties and effects of hydrogen was scarce and not well understood." @default.
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- W102804711 date "2004-01-01" @default.
- W102804711 modified "2023-09-27" @default.
- W102804711 title "Hydrogen in SiC" @default.
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- W102804711 doi "https://doi.org/10.1007/978-3-642-18870-1_3" @default.
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