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- W103663762 abstract "This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd2O3 crystalline template. A smooth two-dimensional Ge layers is obtained from the coalescence of initially three-dimensional Ge islands grown in the Volmer–Weber mode. Ge takes its bulk lattice parameter at the very early stages of its growth. A detailed x-ray pole figure analysis reveals that the epitaxial relationship between the layers and the Si substrate is [1–10]Ge(111)∥[−110]Gd2O3(111)∥[1–10]Si(111) and that microtwins are formed in the Ge layer." @default.
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- W103663762 date "2010-09-01" @default.
- W103663762 modified "2023-09-27" @default.
- W103663762 title "Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template" @default.
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