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- W105415 abstract "Processes to fabricate dense, dry released microstructures with electrical connections on the opposite side of the wafer are described. A 10 x 10 array of silicon and polysilicon cantilevers with high packing density (5 tips/mm 2 ) and high uniformity ( 6 /C 4 F 8 , plasma etch followed by a HBr plasma etch to accurately release cantilevers. A process for fabricating electrical contacts through the backside of the wafer is also described. Electrodeposited resist, conformal CVD metal deposition and deep SF 6 /C 4 F 8 plasma etching are used to make 30 µm/side square vias each of which has a resistance of 50 m(omega)." @default.
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- W105415 date "1998-11-03" @default.
- W105415 modified "2023-09-27" @default.
- W105415 title "Fabrication of high-density cantilever arrays and through-wafer interconnects" @default.
- W105415 hasPublicationYear "1998" @default.
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