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- W1058872184 abstract "摘要 以反射式高能电子衍射(RHEED)作为实时监测工具,根据GaAs(100)表面重构相与衬底温度、As4等效束流压强之间的关系,对分子束外延(MBE)系统中衬底测温系统进行了校准,这种方法也适用于其他的MBE系统.为生长高质量的外延薄膜材料、研究InGaAs表面粗糙化及相变等过程提供了实验依据. 关键词: 分子束外延 / 反射式高能电子衍射 / 表面重构 / 温度校准 Abstract Using RHEED as a real-time monitoring tool, the MBE temperature measurement system was calibrated according to the relationship between GaAs (100) surface reconstruction phase and the substrate temperature, As4 beam equivalent pressure of the substrate. This approach can also be applied to other MBE systems. It provides an experimental basis of the growth of high-quality epitaxial thin films for studying of the surface roughness of InGaAs, the phase transformation process and the surface morphology. Keywords: MBE / RHEED / surface reconstruction / temperature calibration 作者及机构信息 周勋2, 杨再荣1, 罗子江1, 贺业全1, 何浩1, 韦俊3, 邓朝勇1, 丁召1 (1)贵州大学理学院,贵州省微纳电子与软件技术重点实验室,贵阳 550025; (2)贵州大学理学院,贵州省微纳电子与软件技术重点实验室,贵阳 550025;贵州师范大学物理与电子科学学院,贵阳 550001; (3)贵州师范大学物理与电子科学学院,贵阳 550001 基金项目: 国家自然科学基金(批准号: 60866001),贵州省委组织部高层人才科研特助项目(批准号: Z073011,TZJF-2008-31),贵州省科技厅基金(批准号: Z073085),贵州大学博士基金(批准号: X060031),贵州省优秀科技教育人才省长专项基金(批准号: 黔省专合字(2009)114号),教育部新世纪优秀人才支持计划 (批准号: NCET-08-0651),贵州省优秀青年科技人才培养计划(批准号:[2009]-15)资助的课题. Authors and contacts Ding Zhao2, Wei Jun1, Yang Zai-Rong1, Luo Zi-Jiang1, He Ye-Quan1, Zhou Xun3, He Hao1, Deng Chao-Yong1 (1)School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China; (2)Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China; (3)Science college, Guizhou University, Key laboratory of MicroNano Electronies of Guizhou Province, Guiyang 550025, China;School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China 参考文献 [1] Dai J Y, Zhang D W, Yuan J M 2006 Acta Phys. Sin. 55 6073 (in Chinese) [戴佳钰、 张栋文、 袁建民 2006 物理学报 55 6073] [2] Arthur J R, LePore J J 1969 J. Vac. Sci. Technol. 6 545 [3] Cho A Y, 1971 J. Vac. Sci. Technol. 8 S31 [4] Bobel F G, Moller H 1994 J. Vac. Sci. Technol. B 12 1207 [5] Lv Z D, Liang Q, Xu J Z, Zheng B Z, Xv Z Y 1999 Acta Phys. Sin. 48 744 (in Chinese) [吕振东、 李 晴、 许继宗、 郑宝真、 徐仲英 1999 物理学报 48 744] [6] Davisson C, Germer L H 1927 Phys. Rev. 30 705 [7] Neave J H, Joyce B A, Dobson P J 1984 Appl. Phys. A 34 179 [8] Sudijono J, Johnson M D, Snyder C W 1992 Phys. Rev. Lett. 69 2811 [9] Deng B C, Chen Y, Xu G , Chen W H, He Y J, Xie M H, Tang S X 2001 Acta Phys. Sin. 50 106 (in Chinese) [邓丙成、 陈 滢、 徐 耕、 陈文华、 何永健、 谢茂海、 唐叔贤 2001 物理学报 50 106] [10] Zangwill A 1988 Physics at Surfaces (Cambridge,UK: Cambridge University Press) [11] Whitman L J, Thibado P M, Erwin S C, Bennett B R 1997 Phys. Rev. Lett. 79 693 [12] LaBella V P, Yang H, Bullock D W, PThibado P M 1999 Phys. Rev. Lett. 83 2989 [13] SMirbt S, Moll N, Cho K, Joannopoulos J D 1999 Phys. Rev. B 60 13283 [14] Ranke W, Drathen P, Jacobi K 1978 Surf. Sci. 77 L162 [15] Massies J, Etienne P, Dezaly F 1980 Surf. Sci. 99 121 [16] Newstead S M, Kubiak R A A, Parker E H C 1987 J. Cryst. Growth 81 49 [17] Farrell H H, Palmstrom C J 1990 J. Vac. Sci. Technol. B 8 903 [18] LaBella V P, Bullock D W, Emery C, Ding Z 2001 Appl. Phys. Lett. 79 3065 [19] Omicron Multiprobe Surface Science Systems User’s Guide, OMICRON UHV Precision Manipulators, Small Sample MBE Manipulator with Resistive Heater, Manual (Germany Omicron ). 施引文献" @default.
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- W1058872184 title "Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring" @default.
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