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- W110761704 abstract "Photoconductive detectors, fabricated from p-type In0.53Ga0.47As using strip-line techniques, exhibit rise and fall times of 45 and 70 psec FWHM. This performance is consistent with a peak electron drift velocity of 2.1×107 cm/sec at a field of ∼3.5 kV/cm and represents the fastest reported detector response for the 1.0–1.7-μm wavelength range." @default.
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- W110761704 date "1981-01-01" @default.
- W110761704 modified "2023-09-26" @default.
- W110761704 title "Fast photoconductive detector using <i>p</i>-In0.53Ga0.47As with response to 1.7 μm" @default.
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- W110761704 doi "https://doi.org/10.1063/1.92114" @default.
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