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- W111572103 abstract "A novel low-temperature technique for Si/Si interconnection has been developed to achieve high- temperature stable interconnects with potential for further reduction in device dimension. The major process steps are presented. The proposed technique is based on the concept of 3D integration of processed Si wafers pre-aligned with respect to each other to obtain the functional module. The process essentially consists of stacking Si wafers, having a Cu coating at the device pad locations with a pre-sputtered thin film of low melting joining material like Sn, In or Sn-In eutectic, on top of the Cu coating. The Cu layer reacts with the joining material, resulting in growth of intermetallic phases at a specified temperature and pressure for a certain reaction time in the process of diffusion soldering, thereby establishing Si/ Si joints. The joint microstructure is investigated using optical microscopy to have a physical understanding of the associated processing problems." @default.
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- W111572103 date "1999-01-01" @default.
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- W111572103 title "Development of a novel Si/Si interconnection technology for high density packaging" @default.
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