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• W112057989 abstract "The PDB (Planar Doped Barrier) diode consists of a p doping spike between two intrinsic layers and e ohmic contacts. Such devices can have an anti-symmetric current vs. voltage characteristic. The capacitance is approximately constant with the applied voltage, and the barrier height and device capacitance are easily adjustable. These characteristics make the PDB a candidate for millimeterand submillimeter-wave subharmonic mixers. We have fabricated a series of 2 and 4 jam diameter diodes with different barrier designs using a GaAs epi-layer. These devices are planarized using an air-bridge and a surface channel etch. After completely removing the substrate, the devices are mounted on quartz substrate to reduce parasitic effects. Diced diodes were tested as subharmonic mixers at 200 GHz in both a quasi-optical planar wideband subhamionic receiver and a planar-diode waveguide-mixer. The results from quasioptical measurement show that a 0.23 V (and 0.4 V) barrier height GaAs diode with 2.0 p.A. (and nA) of saturation current gives a DSB conversion loss of 10.8 dB (and 9.5 dB) and a noise temperature of 3795°K (and 2450°K). The results available from waveguide mixers are for a similar 0.23 V barrier height PDB and have a minimum conversion loss improved by 0.6 dB (10.2 dB) and noise temperature reduced by 220°K (3575°K), but required only less than 1 milliwatt of LO power." @default.
• W112057989 created "2016-06-24" @default.
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• W112057989 date "1993-04-01" @default.
• W112057989 modified "2023-09-30" @default.
• W112057989 title "The Fabrication and Performance of Planar Doped Barrier Subharmonic Mixer Diodes" @default.
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• W112057989 hasPublicationYear "1993" @default.
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