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- W1123749655 abstract "We proposed and demonstrated an integrated high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with a structure of combined dielectric/metal wire grids (CDMWG). Both theoretical and experimental results show that the CDMWG can effectively loosen the requirement on the dimension of the grating, and the introduction of a low-refractive dielectric layer can further enhance both TMT and ER significantly for the GaN-type LED. An InGaN/ GaN green LED with an integrated CDMWG of 220 nm period has been fabricated, and a measured extinction ratio(ER) of higher than 20 dB and TMT of 65% within an angle of ±40° is obtained directly from a InGaN/GaN LED." @default.
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- W1123749655 date "2015-07-17" @default.
- W1123749655 modified "2023-09-22" @default.
- W1123749655 title "High linearly polarized light emission from GaN-based LED with patterned dielectric/metal structures" @default.
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- W1123749655 doi "https://doi.org/10.1117/12.2189257" @default.
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