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• W1134608711 abstract "Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. Today, billions of transistors are integrated on a single chip and the size of a transistor is on the scale of tens of nanometres. Until recently, the improvements in performance and integration density have been mostly driven by scaling down the transistor size. However, as the length scale is rapidly approaching that of only a few atoms, this scaling paradigm may not continue forever. Instead, the research community, as well as the industry, is investigating alternative structures and materials in order to further increase the performance.One emerging technology for use in future electronic circuits is transistors based on nanowires. The nanowire transistor structure investigated in this work combines a number of key technologies to achieve a higher performance than traditional Si-based transistors. Epitaxially grown nanowires are naturally oriented in the vertical direction, which means that the devices may be fabricated from the bottom and up. This three-dimensional structure allows a higher integration density and enables the gate to completely surround the channel in a gate-all-around configuration. Combined with a high-k dielectric, this results in an excellent electrostatic gate control. Furthermore, nanowires have the unique ability to combine semiconductor materials with significantly different lattice constants. By introducing InAs as a channel material, a much higher electron mobility than for Si is achieved.In this work, simulations of nanowire-based devices are performed and the ultimate performance is predicted. A nanowire transistor architecture with a realistic footprint is proposed and a roadmap is established for the scaling of the device structure, based on a set of technology nodes. Benchmarking is performed against competing technologies, both from a device and circuit perspective. The physical properties of nanowire transistors, and the corresponding capacitor structure, are investigated by band-structure simulations. Based on these simulations, a ballistic transport model is used to derive the intrinsic transistor characteristics. This is combined with an extensive evaluation and optimization of the parasitic elements in the transistor structure for each technology node. It is demonstrated that an optimized nanowire transistor has the potential to operate at terahertz frequencies, while maintaining a low power consumption. A high quality factor and extremely high integration density is predicted for the nanowire capacitor structure. It is concluded that InAs nanowire devices show great potential for use in future electronic circuits, both in digital and analogue applications." @default.
• W1134608711 created "2016-06-24" @default.
• W1134608711 creator A5051186250 @default.
• W1134608711 date "2015-01-01" @default.
• W1134608711 modified "2023-09-25" @default.
• W1134608711 title "InAs Nanowire Devices and Circuits" @default.
• W1134608711 hasPublicationYear "2015" @default.
• W1134608711 type Work @default.
• W1134608711 sameAs 1134608711 @default.
• W1134608711 citedByCount "1" @default.
• W1134608711 countsByYear W11346087112020 @default.
• W1134608711 crossrefType "dissertation" @default.
• W1134608711 hasAuthorship W1134608711A5051186250 @default.
• W1134608711 hasConcept C108225325 @default.
• W1134608711 hasConcept C119599485 @default.
• W1134608711 hasConcept C127413603 @default.
• W1134608711 hasConcept C134146338 @default.
• W1134608711 hasConcept C165801399 @default.
• W1134608711 hasConcept C171250308 @default.
• W1134608711 hasConcept C172385210 @default.
• W1134608711 hasConcept C192562407 @default.
• W1134608711 hasConcept C2524010 @default.
• W1134608711 hasConcept C33923547 @default.
• W1134608711 hasConcept C49040817 @default.
• W1134608711 hasConcept C530198007 @default.
• W1134608711 hasConcept C61696701 @default.
• W1134608711 hasConcept C74214498 @default.
• W1134608711 hasConcept C99844830 @default.
• W1134608711 hasConceptScore W1134608711C108225325 @default.
• W1134608711 hasConceptScore W1134608711C119599485 @default.
• W1134608711 hasConceptScore W1134608711C127413603 @default.
• W1134608711 hasConceptScore W1134608711C134146338 @default.
• W1134608711 hasConceptScore W1134608711C165801399 @default.
• W1134608711 hasConceptScore W1134608711C171250308 @default.
• W1134608711 hasConceptScore W1134608711C172385210 @default.
• W1134608711 hasConceptScore W1134608711C192562407 @default.
• W1134608711 hasConceptScore W1134608711C2524010 @default.
• W1134608711 hasConceptScore W1134608711C33923547 @default.
• W1134608711 hasConceptScore W1134608711C49040817 @default.
• W1134608711 hasConceptScore W1134608711C530198007 @default.
• W1134608711 hasConceptScore W1134608711C61696701 @default.
• W1134608711 hasConceptScore W1134608711C74214498 @default.
• W1134608711 hasConceptScore W1134608711C99844830 @default.
• W1134608711 hasLocation W11346087111 @default.
• W1134608711 hasOpenAccess W1134608711 @default.
• W1134608711 hasPrimaryLocation W11346087111 @default.
• W1134608711 hasRelatedWork W148284894 @default.
• W1134608711 hasRelatedWork W1549986128 @default.
• W1134608711 hasRelatedWork W1575923298 @default.
• W1134608711 hasRelatedWork W1726041470 @default.
• W1134608711 hasRelatedWork W1757363247 @default.
• W1134608711 hasRelatedWork W1970758976 @default.
• W1134608711 hasRelatedWork W1990603367 @default.
• W1134608711 hasRelatedWork W2045356210 @default.
• W1134608711 hasRelatedWork W2080117192 @default.
• W1134608711 hasRelatedWork W2336508902 @default.
• W1134608711 hasRelatedWork W2486737944 @default.
• W1134608711 hasRelatedWork W2510769759 @default.
• W1134608711 hasRelatedWork W2515239025 @default.
• W1134608711 hasRelatedWork W2560902714 @default.
• W1134608711 hasRelatedWork W2798857800 @default.
• W1134608711 hasRelatedWork W3007404091 @default.
• W1134608711 hasRelatedWork W3026744083 @default.
• W1134608711 hasRelatedWork W3161369427 @default.
• W1134608711 hasRelatedWork W1546993154 @default.
• W1134608711 hasRelatedWork W2780788877 @default.
• W1134608711 hasVolume "2015" @default.
• W1134608711 isParatext "false" @default.
• W1134608711 isRetracted "false" @default.
• W1134608711 magId "1134608711" @default.
• W1134608711 workType "dissertation" @default.