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- W1136255769 abstract "设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm.利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB.给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程.光谱测试结果分析表明,器件通道间隔为1.3~1.6nm,通道串扰为3dB,中心通道损耗为11.6dB" @default.
- W1136255769 created "2016-06-24" @default.
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- W1136255769 date "2010-01-01" @default.
- W1136255769 modified "2023-09-23" @default.
- W1136255769 title "8通道-1.6nm Si纳米线阵列波导光栅的设计与制作" @default.
- W1136255769 hasPublicationYear "2010" @default.
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