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- W1146270791 endingPage "158" @default.
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- W1146270791 abstract "This chapter discusses the materials and implantation procedures used to produce high-quality regions for the fabrication of gallium arsenide (GaAs) integrated circuits (ICs).The basic requirement for the substrate material provides electrical isolation among devices, while at the same time allows the formation of high-mobility controlled-doping regions in the areas where devices are to be fabricated. This requirement in most applications is by selective region ion implantation into bulk substrate material of sufficient quality, or by selective region ion implantation into high-purity epitaxial layers produced by liquid-phase epitaxy (LPE) or vapor-phase epitaxy (VPE). The procedures used for the formation of n-layers, for active regions of MESFETs and diodes, and for the formation of n+ regions for the ohmic contact regions of the circuits are discussed in the chapter. It also elaborates the production of medium-scale integration (MSI) GaAs ICs, with emphasis on the influence of implantation conditions and anneal conditions and, most importantly, the influence of the starting substrate material on the properties of the devices and circuits." @default.
- W1146270791 created "2016-06-24" @default.
- W1146270791 creator A5068364497 @default.
- W1146270791 date "1984-01-01" @default.
- W1146270791 modified "2023-09-26" @default.
- W1146270791 title "Chapter 2 Ion Implantation and Materials for GaAs Integrated Circuits" @default.
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