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- W11492109 abstract "In this paper, we review advanced III-V HEMT device technologies for millimetre -wave applications, particularly targeted above 100 GHz. We demonstrate performance advantages in moving to self- aligned T-gate strategies in lattice matched InP HEMTs. For 120 nm gate lengths, we have obtained self-aligned, non-annealed Ohmi c contact devices with gm of 1450 mS/mm, fT of 220 GHz and fmax of 435 GHz. We will also present data on a high yield 50 nm T-gate process in the metamorphic GaAs material system utilizing non-selective digital wet etching with performance metrics including gm of 1500 mS/mm and fT of 350 GHz, to our knowledge, the fastest GaAs-based transistors reported to date." @default.
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- W11492109 date "2003-01-01" @default.
- W11492109 modified "2023-09-27" @default.
- W11492109 title "Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications" @default.
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