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- W1168676810 abstract "GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Materials-based characterization demonstrates threading dislocation densities (TDD) as low as 8.0×106 cm-2 via cathodoluminescence in III–V layers from dual-junction solar cells. The difference in material quality and device performance between lattice-match conditions at room temperature and growth temperature are quantified. These improvements are primarily realized through the use of an in-situ optical stress sensor in order to evaluate lattice-mismatch during MOCVD growth. Thus, due to improved material quality, window layer design, and contact resistance, we have achieved GaAsP/SiGe tandem performance with an AM1.5G open-circuit voltage of 1.458 V, a top subcell external quantum efficiency-extracted short-circuit current density of 13.8 mA/cm2 (no AR), and a fill factor of 82.8%." @default.
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- W1168676810 date "2015-11-01" @default.
- W1168676810 modified "2023-10-12" @default.
- W1168676810 title "GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance" @default.
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- W1168676810 doi "https://doi.org/10.1016/j.mssp.2015.05.058" @default.
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