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- W1178244519 abstract "Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped gallium arsenide" @default.
- W1178244519 created "2016-06-24" @default.
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- W1178244519 date "1968-08-13" @default.
- W1178244519 modified "2023-09-26" @default.
- W1178244519 title "Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere Patent" @default.
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